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- Publisher Website: 10.1002/adma.201606918
- Scopus: eid_2-s2.0-85018545406
- PMID: 28417567
- WOS: WOS:000403911800021
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Article: A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers
Title | A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers |
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Authors | |
Keywords | p–i–n junction electric double layers zinc oxide transition metal dichalcogenides light-emitting devices |
Issue Date | 2017 |
Citation | Advanced Materials, 2017, v. 29, n. 24, article no. 1606918 How to Cite? |
Abstract | The light-emitting device is the primary device for current light sources. In principle, conventional light-emitting devices need heterostructures and/or intentional carrier doping to form a p–n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light-emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light-emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p–i–n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices. |
Persistent Identifier | http://hdl.handle.net/10722/298210 |
ISSN | 2023 Impact Factor: 27.4 2023 SCImago Journal Rankings: 9.191 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Pu, Jiang | - |
dc.contributor.author | Fujimoto, Taiyo | - |
dc.contributor.author | Ohasi, Yuki | - |
dc.contributor.author | Kimura, Shota | - |
dc.contributor.author | Chen, Chang Hsiao | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Sakanoue, Tomo | - |
dc.contributor.author | Takenobu, Taishi | - |
dc.date.accessioned | 2021-04-08T03:07:55Z | - |
dc.date.available | 2021-04-08T03:07:55Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | Advanced Materials, 2017, v. 29, n. 24, article no. 1606918 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298210 | - |
dc.description.abstract | The light-emitting device is the primary device for current light sources. In principle, conventional light-emitting devices need heterostructures and/or intentional carrier doping to form a p–n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light-emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light-emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p–i–n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices. | - |
dc.language | eng | - |
dc.relation.ispartof | Advanced Materials | - |
dc.subject | p–i–n junction | - |
dc.subject | electric double layers | - |
dc.subject | zinc oxide | - |
dc.subject | transition metal dichalcogenides | - |
dc.subject | light-emitting devices | - |
dc.title | A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1002/adma.201606918 | - |
dc.identifier.pmid | 28417567 | - |
dc.identifier.scopus | eid_2-s2.0-85018545406 | - |
dc.identifier.volume | 29 | - |
dc.identifier.issue | 24 | - |
dc.identifier.spage | article no. 1606918 | - |
dc.identifier.epage | article no. 1606918 | - |
dc.identifier.eissn | 1521-4095 | - |
dc.identifier.isi | WOS:000403911800021 | - |
dc.identifier.issnl | 0935-9648 | - |