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Article: Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers

TitleStrong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers
Authors
KeywordsRashba-Edelstein effect
transition metal dichalcogenides
two-dimensional materials
spintronics
charge-spin conversion
Spin-orbit torque
Issue Date2016
Citation
Nano Letters, 2016, v. 16, n. 12, p. 7514-7520 How to Cite?
AbstractThe electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS or WSe )/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials. 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298187
ISSN
2023 Impact Factor: 9.6
2023 SCImago Journal Rankings: 3.411
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorShao, Qiming-
dc.contributor.authorYu, Guoqiang-
dc.contributor.authorLan, Yann Wen-
dc.contributor.authorShi, Yumeng-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorZheng, Cheng-
dc.contributor.authorZhu, Xiaodan-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorAmiri, Pedram Khalili-
dc.contributor.authorWang, Kang L.-
dc.date.accessioned2021-04-08T03:07:52Z-
dc.date.available2021-04-08T03:07:52Z-
dc.date.issued2016-
dc.identifier.citationNano Letters, 2016, v. 16, n. 12, p. 7514-7520-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/298187-
dc.description.abstractThe electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS or WSe )/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials. 2 2-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.subjectRashba-Edelstein effect-
dc.subjecttransition metal dichalcogenides-
dc.subjecttwo-dimensional materials-
dc.subjectspintronics-
dc.subjectcharge-spin conversion-
dc.subjectSpin-orbit torque-
dc.titleStrong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acs.nanolett.6b03300-
dc.identifier.scopuseid_2-s2.0-85006387009-
dc.identifier.volume16-
dc.identifier.issue12-
dc.identifier.spage7514-
dc.identifier.epage7520-
dc.identifier.eissn1530-6992-
dc.identifier.isiWOS:000389963200031-
dc.identifier.issnl1530-6984-

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