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Article: Activating basal-plane catalytic activity of two-dimensional MoS2 monolayer with remote hydrogen plasma

TitleActivating basal-plane catalytic activity of two-dimensional MoS<inf>2</inf> monolayer with remote hydrogen plasma
Authors
KeywordsElectrolysis
Transition metal dichalcogenides
MoS 2
Hydrogen evolution reaction
Catalysis
Issue Date2016
Citation
Nano Energy, 2016, v. 30, p. 846-852 How to Cite?
AbstractTwo-dimensional layered transition metal dichalcogenide (TMD) materials such as Molybdenum disufide (MoS ) have been recognized as one of the low-cost and efficient electrocatalysts for hydrogen evolution reaction (HER). The crystal edges that account for a small percentage of the surface area, rather than the basal planes, of MoS monolayer have been confirmed as their active catalytic sites. As a result, extensive efforts have been developing in activating the basal planes of MoS for enhancing their HER activity. Here, we report a simple and efficient approach—using a remote hydrogen-plasma process—to creating S-vacancies on the basal plane of monolayer crystalline MoS ; this process can generate high density of S-vacancies while mainly maintaining the morphology and structure of MoS monolayer. The density of S-vacancies (defects) on MoS monolayers resulted from the remote hydrogen-plasma process can be tuned and play a critical role in HER, as evidenced in the results of our spectroscopic and electrical measurements. The H -plasma treated MoS also provides an excellent platform for systematic and fundamental study of defect-property relationships in TMDs, which provides insights for future applications including electrical, optical and magnetic devices. 2 2 2 2 2 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298179
ISSN
2020 Impact Factor: 17.881
2015 SCImago Journal Rankings: 4.169

 

DC FieldValueLanguage
dc.contributor.authorCheng, Chia Chin-
dc.contributor.authorLu, Ang Yu-
dc.contributor.authorTseng, Chien Chih-
dc.contributor.authorYang, Xiulin-
dc.contributor.authorHedhili, Mohamed Nejib-
dc.contributor.authorChen, Min Cheng-
dc.contributor.authorWei, Kung Hwa-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:07:51Z-
dc.date.available2021-04-08T03:07:51Z-
dc.date.issued2016-
dc.identifier.citationNano Energy, 2016, v. 30, p. 846-852-
dc.identifier.issn2211-2855-
dc.identifier.urihttp://hdl.handle.net/10722/298179-
dc.description.abstractTwo-dimensional layered transition metal dichalcogenide (TMD) materials such as Molybdenum disufide (MoS ) have been recognized as one of the low-cost and efficient electrocatalysts for hydrogen evolution reaction (HER). The crystal edges that account for a small percentage of the surface area, rather than the basal planes, of MoS monolayer have been confirmed as their active catalytic sites. As a result, extensive efforts have been developing in activating the basal planes of MoS for enhancing their HER activity. Here, we report a simple and efficient approach—using a remote hydrogen-plasma process—to creating S-vacancies on the basal plane of monolayer crystalline MoS ; this process can generate high density of S-vacancies while mainly maintaining the morphology and structure of MoS monolayer. The density of S-vacancies (defects) on MoS monolayers resulted from the remote hydrogen-plasma process can be tuned and play a critical role in HER, as evidenced in the results of our spectroscopic and electrical measurements. The H -plasma treated MoS also provides an excellent platform for systematic and fundamental study of defect-property relationships in TMDs, which provides insights for future applications including electrical, optical and magnetic devices. 2 2 2 2 2 2 2 2-
dc.languageeng-
dc.relation.ispartofNano Energy-
dc.subjectElectrolysis-
dc.subjectTransition metal dichalcogenides-
dc.subjectMoS 2-
dc.subjectHydrogen evolution reaction-
dc.subjectCatalysis-
dc.titleActivating basal-plane catalytic activity of two-dimensional MoS<inf>2</inf> monolayer with remote hydrogen plasma-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.nanoen.2016.09.010-
dc.identifier.scopuseid_2-s2.0-84994718788-
dc.identifier.volume30-
dc.identifier.spage846-
dc.identifier.epage852-
dc.identifier.issnl2211-2855-

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