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Article: Photoluminescence enhancement and structure repairing of monolayer MoSe2 by hydrohalic acid treatment

TitlePhotoluminescence enhancement and structure repairing of monolayer MoSe<inf>2</inf> by hydrohalic acid treatment
Authors
KeywordsLayered materials
Transition-metal dichalcogenides
Two-dimensional materials
Molybdenum diselenide
Photoluminescence
Issue Date2016
Citation
ACS Nano, 2016, v. 10, n. 1, p. 1454-1461 How to Cite?
AbstractAtomically thin two-dimensional transitionmetal dichalcogenides (TMDCs) have attracted much attention recently due to their unique electronic and optical properties for future optoelectronic devices. The chemical vapor deposition (CVD) method is able to generate TMDCs layers with a scalable size and a controllable thickness. However, the TMDC monolayers grown by CVD may incorporate structural defects, and it is fundamentally important to understand the relation between photoluminescence and structural defects. In this report, point defects (Se vacancies) and oxidized Se defects in CVD-grown MoSe monolayers are identified by transmission electron microscopy and X-ray photoelectron spectroscopy. These defects can significantly trap free charge carriers and localize excitons, leading to the smearing of free band-To-band exciton emission. Here, we report that the simple hydrohalic acid treatment (such as HBr) is able to efficiently suppress the trapstate emission and promote the neutral exciton and trion emission in defective MoSe monolayers through the p-doping process, where the overall photoluminescence intensity at room temperature can be enhanced by a factor of 30. We show that HBr treatment is able to activate distinctive trion and free exciton emissions even from highly defective MoSe layers. Our results suggest that the HBr treatment not only reduces the n-doping in MoSe but also reduces the structural defects. The results provide further insights of the control and tailoring the exciton emission from CVD-grown monolayer TMDCs. 2 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298176
ISSN
2023 Impact Factor: 15.8
2023 SCImago Journal Rankings: 4.593
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHan, Hau Vei-
dc.contributor.authorLu, Ang Yu-
dc.contributor.authorLu, Li Syuan-
dc.contributor.authorHuang, Jing Kai-
dc.contributor.authorLi, Henan-
dc.contributor.authorHsu, Chang Lung-
dc.contributor.authorLin, Yung Chang-
dc.contributor.authorChiu, Ming Hui-
dc.contributor.authorSuenaga, Kazu-
dc.contributor.authorChu, Chih Wei-
dc.contributor.authorKuo, Hao Chung-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorShi, Yumeng-
dc.date.accessioned2021-04-08T03:07:50Z-
dc.date.available2021-04-08T03:07:50Z-
dc.date.issued2016-
dc.identifier.citationACS Nano, 2016, v. 10, n. 1, p. 1454-1461-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/298176-
dc.description.abstractAtomically thin two-dimensional transitionmetal dichalcogenides (TMDCs) have attracted much attention recently due to their unique electronic and optical properties for future optoelectronic devices. The chemical vapor deposition (CVD) method is able to generate TMDCs layers with a scalable size and a controllable thickness. However, the TMDC monolayers grown by CVD may incorporate structural defects, and it is fundamentally important to understand the relation between photoluminescence and structural defects. In this report, point defects (Se vacancies) and oxidized Se defects in CVD-grown MoSe monolayers are identified by transmission electron microscopy and X-ray photoelectron spectroscopy. These defects can significantly trap free charge carriers and localize excitons, leading to the smearing of free band-To-band exciton emission. Here, we report that the simple hydrohalic acid treatment (such as HBr) is able to efficiently suppress the trapstate emission and promote the neutral exciton and trion emission in defective MoSe monolayers through the p-doping process, where the overall photoluminescence intensity at room temperature can be enhanced by a factor of 30. We show that HBr treatment is able to activate distinctive trion and free exciton emissions even from highly defective MoSe layers. Our results suggest that the HBr treatment not only reduces the n-doping in MoSe but also reduces the structural defects. The results provide further insights of the control and tailoring the exciton emission from CVD-grown monolayer TMDCs. 2 2 2 2-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subjectLayered materials-
dc.subjectTransition-metal dichalcogenides-
dc.subjectTwo-dimensional materials-
dc.subjectMolybdenum diselenide-
dc.subjectPhotoluminescence-
dc.titlePhotoluminescence enhancement and structure repairing of monolayer MoSe<inf>2</inf> by hydrohalic acid treatment-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsnano.5b06960-
dc.identifier.scopuseid_2-s2.0-84989908671-
dc.identifier.volume10-
dc.identifier.issue1-
dc.identifier.spage1454-
dc.identifier.epage1461-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:000369115800163-
dc.identifier.issnl1936-0851-

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