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Article: Atomic-Monolayer MoS2Band-to-Band Tunneling Field-Effect Transistor

TitleAtomic-Monolayer MoS<inf>2</inf>Band-to-Band Tunneling Field-Effect Transistor
Authors
Lan, Yann WenTorres, Carlos M.Tsai, Shin HungZhu, XiaodanShi, YumengLi, Ming YangLi, Lain JongYeh, Wen KuanWang, Kang L.
KeywordsMoS 2
band-to-band tunneling
2D materials
transition metal dichalcogenides
tunneling field effect transistors
Issue Date2016
Citation
Small, 2016, v. 12, n. 41, p. 5676-5683 How to Cite?
DOI: http://dx.doi.org/10.1002/smll.201601310
Persistent Identifierhttp://hdl.handle.net/10722/298173
ISSN
1613-6810
2023 Impact Factor: 13.0
2023 SCImago Journal Rankings: 3.348
ISI Accession Number ID
WOS:000389402000002

 

DC FieldValueLanguage
dc.contributor.authorLan, Yann Wen-
dc.contributor.authorTorres, Carlos M.-
dc.contributor.authorTsai, Shin Hung-
dc.contributor.authorZhu, Xiaodan-
dc.contributor.authorShi, Yumeng-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorYeh, Wen Kuan-
dc.contributor.authorWang, Kang L.-
dc.date.accessioned2021-04-08T03:07:50Z-
dc.date.available2021-04-08T03:07:50Z-
dc.date.issued2016-
dc.identifier.citationSmall, 2016, v. 12, n. 41, p. 5676-5683-
dc.identifier.issn1613-6810-
dc.identifier.urihttp://hdl.handle.net/10722/298173-
dc.languageeng-
dc.relation.ispartofSmall-
dc.subjectMoS 2-
dc.subjectband-to-band tunneling-
dc.subject2D materials-
dc.subjecttransition metal dichalcogenides-
dc.subjecttunneling field effect transistors-
dc.titleAtomic-Monolayer MoS<inf>2</inf>Band-to-Band Tunneling Field-Effect Transistor-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/smll.201601310-
dc.identifier.scopuseid_2-s2.0-84988598567-
dc.identifier.volume12-
dc.identifier.issue41-
dc.identifier.spage5676-
dc.identifier.epage5683-
dc.identifier.eissn1613-6829-
dc.identifier.isiWOS:000389402000002-
dc.identifier.issnl1613-6810-

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