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Article: Determination of band offsets at GaN/single-layer MoS2 heterojunction

TitleDetermination of band offsets at GaN/single-layer MoS<inf>2</inf> heterojunction
Authors
Issue Date2016
Citation
Applied Physics Letters, 2016, v. 109, n. 3, article no. 032104 How to Cite?
AbstractWe report the band alignment parameters of the GaN/single-layer (SL) MoS heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS /c-sapphire. We confirm that the MoS is an SL by measuring the separation and position of room temperature micro-Raman E and A modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices. 2 2 2 2g g 2 2 1 1
Persistent Identifierhttp://hdl.handle.net/10722/298165
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTangi, Malleswararao-
dc.contributor.authorMishra, Pawan-
dc.contributor.authorNg, Tien Khee-
dc.contributor.authorHedhili, Mohamed Nejib-
dc.contributor.authorJanjua, Bilal-
dc.contributor.authorAlias, Mohd Sharizal-
dc.contributor.authorAnjum, Dalaver H.-
dc.contributor.authorTseng, Chien Chi-
dc.contributor.authorShi, Yumeng-
dc.contributor.authorJoyce, Hannah J.-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorOoi, Boon S.-
dc.date.accessioned2021-04-08T03:07:49Z-
dc.date.available2021-04-08T03:07:49Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics Letters, 2016, v. 109, n. 3, article no. 032104-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/298165-
dc.description.abstractWe report the band alignment parameters of the GaN/single-layer (SL) MoS heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS /c-sapphire. We confirm that the MoS is an SL by measuring the separation and position of room temperature micro-Raman E and A modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices. 2 2 2 2g g 2 2 1 1-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleDetermination of band offsets at GaN/single-layer MoS<inf>2</inf> heterojunction-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4959254-
dc.identifier.scopuseid_2-s2.0-84979574419-
dc.identifier.volume109-
dc.identifier.issue3-
dc.identifier.spagearticle no. 032104-
dc.identifier.epagearticle no. 032104-
dc.identifier.isiWOS:000381385900031-
dc.identifier.issnl0003-6951-

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