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Article: High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors

TitleHigh-Current Gain Two-Dimensional MoS<inf>2</inf>-Base Hot-Electron Transistors
Authors
Keywordshot-electron transport
transition metal dichalcogenides
high-current gain
2D materials
MoS 2
Issue Date2015
Citation
Nano Letters, 2015, v. 15, n. 12, p. 7905-7912 How to Cite?
AbstractThe vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS and HfO for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298138
ISSN
2023 Impact Factor: 9.6
2023 SCImago Journal Rankings: 3.411
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTorres, Carlos M.-
dc.contributor.authorLan, Yann Wen-
dc.contributor.authorZeng, Caifu-
dc.contributor.authorChen, Jyun Hong-
dc.contributor.authorKou, Xufeng-
dc.contributor.authorNavabi, Aryan-
dc.contributor.authorTang, Jianshi-
dc.contributor.authorMontazeri, Mohammad-
dc.contributor.authorAdleman, James R.-
dc.contributor.authorLerner, Mitchell B.-
dc.contributor.authorZhong, Yuan Liang-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorChen, Chii Dong-
dc.contributor.authorWang, Kang L.-
dc.date.accessioned2021-04-08T03:07:46Z-
dc.date.available2021-04-08T03:07:46Z-
dc.date.issued2015-
dc.identifier.citationNano Letters, 2015, v. 15, n. 12, p. 7905-7912-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/298138-
dc.description.abstractThe vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS and HfO for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. 2 2-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.subjecthot-electron transport-
dc.subjecttransition metal dichalcogenides-
dc.subjecthigh-current gain-
dc.subject2D materials-
dc.subjectMoS 2-
dc.titleHigh-Current Gain Two-Dimensional MoS<inf>2</inf>-Base Hot-Electron Transistors-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acs.nanolett.5b03768-
dc.identifier.scopuseid_2-s2.0-84949682119-
dc.identifier.volume15-
dc.identifier.issue12-
dc.identifier.spage7905-
dc.identifier.epage7912-
dc.identifier.eissn1530-6992-
dc.identifier.isiWOS:000366339600019-
dc.identifier.issnl1530-6984-

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