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Article: Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

TitleAtomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
Authors
Issue Date2015
Citation
Nature Communications, 2015, v. 6, article no. 7311 How to Cite?
AbstractVertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS 2 -WSe 2 -graphene and WSe2-MoS2-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.
Persistent Identifierhttp://hdl.handle.net/10722/298125
PubMed Central ID

 

DC FieldValueLanguage
dc.contributor.authorLin, Yu Chuan-
dc.contributor.authorGhosh, Ram Krishna-
dc.contributor.authorAddou, Rafik-
dc.contributor.authorLu, Ning-
dc.contributor.authorEichfeld, Sarah M.-
dc.contributor.authorZhu, Hui-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorPeng, Xin-
dc.contributor.authorKim, Moon J.-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorWallace, Robert M.-
dc.contributor.authorDatta, Suman-
dc.contributor.authorRobinson, Joshua A.-
dc.date.accessioned2021-04-08T03:07:44Z-
dc.date.available2021-04-08T03:07:44Z-
dc.date.issued2015-
dc.identifier.citationNature Communications, 2015, v. 6, article no. 7311-
dc.identifier.urihttp://hdl.handle.net/10722/298125-
dc.description.abstractVertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS<inf>2</inf>), molybdenum diselenide (MoSe<inf>2</inf>) and tungsten diselenide (WSe<inf>2</inf>). The realization of MoS 2 -WSe 2 -graphene and WSe<inf>2</inf>-MoS<inf>2</inf>-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.-
dc.languageeng-
dc.relation.ispartofNature Communications-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleAtomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1038/ncomms8311-
dc.identifier.pmid26088295-
dc.identifier.pmcidPMC4557306-
dc.identifier.scopuseid_2-s2.0-84934964778-
dc.identifier.volume6-
dc.identifier.spagearticle no. 7311-
dc.identifier.epagearticle no. 7311-
dc.identifier.eissn2041-1723-
dc.identifier.issnl2041-1723-

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