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Article: Atomically thin heterostructures based on single-layer tungsten diselenide and graphene

TitleAtomically thin heterostructures based on single-layer tungsten diselenide and graphene
Authors
KeywordsLEED/LEEM
graphene
heterostructures
electron tunneling
conductive AFM
direct growth
tungsten diselenide (WSe ) 2
Issue Date2014
Citation
Nano Letters, 2014, v. 14, n. 12, p. 6936-6941 How to Cite?
AbstractHeterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe ) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe and EG. Vertical transport measurements across the WSe /EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe /EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF). 2 2 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298101
ISSN
2020 Impact Factor: 11.189
2020 SCImago Journal Rankings: 4.853

 

DC FieldValueLanguage
dc.contributor.authorLin, Yu Chuan-
dc.contributor.authorChang, Chih Yuan S.-
dc.contributor.authorGhosh, Ram Krishna-
dc.contributor.authorLi, Jie-
dc.contributor.authorZhu, Hui-
dc.contributor.authorAddou, Rafik-
dc.contributor.authorDiaconescu, Bogdan-
dc.contributor.authorOhta, Taisuke-
dc.contributor.authorPeng, Xin-
dc.contributor.authorLu, Ning-
dc.contributor.authorKim, Moon J.-
dc.contributor.authorRobinson, Jeremy T.-
dc.contributor.authorWallace, Robert M.-
dc.contributor.authorMayer, Theresa S.-
dc.contributor.authorDatta, Suman-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorRobinson, Joshua A.-
dc.date.accessioned2021-04-08T03:07:40Z-
dc.date.available2021-04-08T03:07:40Z-
dc.date.issued2014-
dc.identifier.citationNano Letters, 2014, v. 14, n. 12, p. 6936-6941-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/298101-
dc.description.abstractHeterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe ) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe and EG. Vertical transport measurements across the WSe /EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe /EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF). 2 2 2 2 2-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.subjectLEED/LEEM-
dc.subjectgraphene-
dc.subjectheterostructures-
dc.subjectelectron tunneling-
dc.subjectconductive AFM-
dc.subjectdirect growth-
dc.subjecttungsten diselenide (WSe ) 2-
dc.titleAtomically thin heterostructures based on single-layer tungsten diselenide and graphene-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nl503144a-
dc.identifier.pmid25383798-
dc.identifier.scopuseid_2-s2.0-84916627442-
dc.identifier.volume14-
dc.identifier.issue12-
dc.identifier.spage6936-
dc.identifier.epage6941-
dc.identifier.eissn1530-6992-
dc.identifier.issnl1530-6984-

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