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- Publisher Website: 10.1021/nn502776h
- Scopus: eid_2-s2.0-84906652964
- WOS: WOS:000340992300080
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Article: Monolayer MoS2 heterojunction solar cells
| Title | Monolayer MoS<inf>2</inf> heterojunction solar cells |
|---|---|
| Authors | |
| Keywords | monolayer heterojunction solar cell molybdenum disulfide chemical vapor deposition 2D material |
| Issue Date | 2014 |
| Citation | ACS Nano, 2014, v. 8, n. 8, p. 8317-8322 How to Cite? |
| Abstract | We realized photovoltaic operation in large-scale MoS monolayers by the formation of a type-II heterojunction with p-Si. The MoS monolayer introduces a built-in electric field near the interface between MoS and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS /Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society. 2 2 2 2 |
| Persistent Identifier | http://hdl.handle.net/10722/298093 |
| ISSN | 2023 Impact Factor: 15.8 2023 SCImago Journal Rankings: 4.593 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Tsai, Meng Lin | - |
| dc.contributor.author | Su, Sheng Han | - |
| dc.contributor.author | Chang, Jan Kai | - |
| dc.contributor.author | Tsai, Dung Sheng | - |
| dc.contributor.author | Chen, Chang Hsiao | - |
| dc.contributor.author | Wu, Chih I. | - |
| dc.contributor.author | Li, Lain Jong | - |
| dc.contributor.author | Chen, Lih Juann | - |
| dc.contributor.author | He, Jr Hau | - |
| dc.date.accessioned | 2021-04-08T03:07:39Z | - |
| dc.date.available | 2021-04-08T03:07:39Z | - |
| dc.date.issued | 2014 | - |
| dc.identifier.citation | ACS Nano, 2014, v. 8, n. 8, p. 8317-8322 | - |
| dc.identifier.issn | 1936-0851 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/298093 | - |
| dc.description.abstract | We realized photovoltaic operation in large-scale MoS monolayers by the formation of a type-II heterojunction with p-Si. The MoS monolayer introduces a built-in electric field near the interface between MoS and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS /Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society. 2 2 2 2 | - |
| dc.language | eng | - |
| dc.relation.ispartof | ACS Nano | - |
| dc.subject | monolayer | - |
| dc.subject | heterojunction solar cell | - |
| dc.subject | molybdenum disulfide | - |
| dc.subject | chemical vapor deposition | - |
| dc.subject | 2D material | - |
| dc.title | Monolayer MoS<inf>2</inf> heterojunction solar cells | - |
| dc.type | Article | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1021/nn502776h | - |
| dc.identifier.scopus | eid_2-s2.0-84906652964 | - |
| dc.identifier.volume | 8 | - |
| dc.identifier.issue | 8 | - |
| dc.identifier.spage | 8317 | - |
| dc.identifier.epage | 8322 | - |
| dc.identifier.eissn | 1936-086X | - |
| dc.identifier.isi | WOS:000340992300080 | - |
| dc.identifier.issnl | 1936-0851 | - |