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Article: Trilayered MoS2 metal -Semiconductor-metal photodetectors: Photogain and radiation resistance

TitleTrilayered MoS<inf>2</inf> metal -Semiconductor-metal photodetectors: Photogain and radiation resistance
Authors
Keywordsharsh environment
Radiation resistance
photodetector
MoS 2
Graphene
Issue Date2014
Citation
IEEE Journal on Selected Topics in Quantum Electronics, 2014, v. 20, n. 1, article no. 6553644 How to Cite?
AbstractTrilayered MoS metal-semiconductor-metal (MSM) photodetectors (PDs) exhibit the photogain is up to 24 with high responsivity (∼1.04 A/W). This is because photocarriers generated at the MoS2 between two Au electrodes drift toward the metal-semiconductor interfaces due to band bending under applied bias and are then trapped at the surface state sites at the Au/MoS2 interfaces, giving rise to the decrease in Schottky barrier height. Moreover, MoS MSM PDs show fast operation speed; as the contact spacing reduces from 8 to 4 μm, the rise time and fall time of PDs reduce from 70 to 40 μs and from 110 to 50 μs, respectively. Trilayered MoS MSM PDs can operate even after 2-MeV proton illumination with ∼10 cm fluences, indicating the high radiation tolerance. This work demonstrates that trilayer MoS opens up a new dimension for 2-D nanomaterial applications in harsh electronics. © 2013 IEEE. 2 2 2 2 11 -2
Persistent Identifierhttp://hdl.handle.net/10722/298049
ISSN
2023 Impact Factor: 4.3
2023 SCImago Journal Rankings: 1.283
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTsai, Dung Sheng-
dc.contributor.authorLien, Der Hsien-
dc.contributor.authorTsai, Meng Lin-
dc.contributor.authorSu, Sheng Han-
dc.contributor.authorChen, Kuan Ming-
dc.contributor.authorKe, Jr Jian-
dc.contributor.authorYu, Yueh Chung-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorHe, Jr Hau-
dc.date.accessioned2021-04-08T03:07:33Z-
dc.date.available2021-04-08T03:07:33Z-
dc.date.issued2014-
dc.identifier.citationIEEE Journal on Selected Topics in Quantum Electronics, 2014, v. 20, n. 1, article no. 6553644-
dc.identifier.issn1077-260X-
dc.identifier.urihttp://hdl.handle.net/10722/298049-
dc.description.abstractTrilayered MoS metal-semiconductor-metal (MSM) photodetectors (PDs) exhibit the photogain is up to 24 with high responsivity (∼1.04 A/W). This is because photocarriers generated at the MoS2 between two Au electrodes drift toward the metal-semiconductor interfaces due to band bending under applied bias and are then trapped at the surface state sites at the Au/MoS2 interfaces, giving rise to the decrease in Schottky barrier height. Moreover, MoS MSM PDs show fast operation speed; as the contact spacing reduces from 8 to 4 μm, the rise time and fall time of PDs reduce from 70 to 40 μs and from 110 to 50 μs, respectively. Trilayered MoS MSM PDs can operate even after 2-MeV proton illumination with ∼10 cm fluences, indicating the high radiation tolerance. This work demonstrates that trilayer MoS opens up a new dimension for 2-D nanomaterial applications in harsh electronics. © 2013 IEEE. 2 2 2 2 11 -2-
dc.languageeng-
dc.relation.ispartofIEEE Journal on Selected Topics in Quantum Electronics-
dc.subjectharsh environment-
dc.subjectRadiation resistance-
dc.subjectphotodetector-
dc.subjectMoS 2-
dc.subjectGraphene-
dc.titleTrilayered MoS<inf>2</inf> metal -Semiconductor-metal photodetectors: Photogain and radiation resistance-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/JSTQE.2013.2268383-
dc.identifier.scopuseid_2-s2.0-84882796855-
dc.identifier.volume20-
dc.identifier.issue1-
dc.identifier.spagearticle no. 6553644-
dc.identifier.epagearticle no. 6553644-
dc.identifier.isiWOS:000329996300005-
dc.identifier.issnl1077-260X-

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