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- Publisher Website: 10.1063/1.4813311
- Scopus: eid_2-s2.0-84880496260
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Article: Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics
| Title | Fabrication of stretchable MoS<inf>2</inf> thin-film transistors using elastic ion-gel gate dielectrics |
|---|---|
| Authors | |
| Issue Date | 2013 |
| Citation | Applied Physics Letters, 2013, v. 103, n. 2, article no. 023505 How to Cite? |
| Abstract | We fabricated stretchable molybdenum disulfide thin-film transistors (MoS TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm /(V·s) and an on/off current ratio of 10 with a notably low threshold voltage (∼1 V). Furthermore, our MoS TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS films for stretchable electronics. © 2013 AIP Publishing LLC. 2 2 2 2 4 |
| Persistent Identifier | http://hdl.handle.net/10722/298042 |
| ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Pu, Jiang | - |
| dc.contributor.author | Zhang, Yijin | - |
| dc.contributor.author | Wada, Yoshifumi | - |
| dc.contributor.author | Tse-Wei Wang, Jacob | - |
| dc.contributor.author | Li, Lain Jong | - |
| dc.contributor.author | Iwasa, Yoshihiro | - |
| dc.contributor.author | Takenobu, Taishi | - |
| dc.date.accessioned | 2021-04-08T03:07:32Z | - |
| dc.date.available | 2021-04-08T03:07:32Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Applied Physics Letters, 2013, v. 103, n. 2, article no. 023505 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/298042 | - |
| dc.description.abstract | We fabricated stretchable molybdenum disulfide thin-film transistors (MoS TFTs) on poly(dimethylsiloxane) substrates using ion gels as elastic gate dielectrics. The TFTs exhibited an electron mobility of 1.40 cm /(V·s) and an on/off current ratio of 10 with a notably low threshold voltage (∼1 V). Furthermore, our MoS TFTs operated at a mechanical strain of 5% without significant degradation of their electrical properties. These results demonstrate the potential for using MoS films for stretchable electronics. © 2013 AIP Publishing LLC. 2 2 2 2 4 | - |
| dc.language | eng | - |
| dc.relation.ispartof | Applied Physics Letters | - |
| dc.title | Fabrication of stretchable MoS<inf>2</inf> thin-film transistors using elastic ion-gel gate dielectrics | - |
| dc.type | Article | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1063/1.4813311 | - |
| dc.identifier.scopus | eid_2-s2.0-84880496260 | - |
| dc.identifier.volume | 103 | - |
| dc.identifier.issue | 2 | - |
| dc.identifier.spage | article no. 023505 | - |
| dc.identifier.epage | article no. 023505 | - |
| dc.identifier.isi | WOS:000321761000091 | - |
| dc.identifier.issnl | 0003-6951 | - |