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Conference Paper: One-step formation of atomic-layered transistor by selective fluorination of graphene film

TitleOne-step formation of atomic-layered transistor by selective fluorination of graphene film
Authors
KeywordsGraphene
CF plasma and Transistor 4
Issue Date2013
Citation
Proceedings - Winter Simulation Conference, 2013, p. 326-328 How to Cite?
AbstractIn this work, the wafer scale fabrication of atomic layered transistors are demonstrated by selective fluorination of graphene with a remote CF plasma, where the generated F-radicals preferentially fluorinated graphene surface at low temperature (<200°C) while this technique suppress the defect formation by screening out the ion damage effect. The resultant grapehene shows electrical semiconducting and isolation after subjected to the fluorination for 5∼20min, respectively. A back-gate transistor is then fabricated with a one-step fluorination of graphene film on Si0 substrate. The chemical structure, C-F bonds, is well correlated to the electrical properties in fluorinated graphene by XPS, Raman spectroscopy and electrical meter. This efficient method provide electrical semiconducting and insulator of graphene with a large area and selective pattering, where it turns out the potential for the integration of electronics down to atomic layered scale. © 2013 IEEE. 4 2
Persistent Identifierhttp://hdl.handle.net/10722/298024
ISSN
2023 SCImago Journal Rankings: 0.272

 

DC FieldValueLanguage
dc.contributor.authorHo, Kuan I.-
dc.contributor.authorLiao, Jia Hong-
dc.contributor.authorHuang, Chi Hsien-
dc.contributor.authorHsu, Chang Lung-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLai, Chao Sung-
dc.contributor.authorSu, Ching Yuan-
dc.date.accessioned2021-04-08T03:07:30Z-
dc.date.available2021-04-08T03:07:30Z-
dc.date.issued2013-
dc.identifier.citationProceedings - Winter Simulation Conference, 2013, p. 326-328-
dc.identifier.issn0891-7736-
dc.identifier.urihttp://hdl.handle.net/10722/298024-
dc.description.abstractIn this work, the wafer scale fabrication of atomic layered transistors are demonstrated by selective fluorination of graphene with a remote CF plasma, where the generated F-radicals preferentially fluorinated graphene surface at low temperature (<200°C) while this technique suppress the defect formation by screening out the ion damage effect. The resultant grapehene shows electrical semiconducting and isolation after subjected to the fluorination for 5∼20min, respectively. A back-gate transistor is then fabricated with a one-step fluorination of graphene film on Si0 substrate. The chemical structure, C-F bonds, is well correlated to the electrical properties in fluorinated graphene by XPS, Raman spectroscopy and electrical meter. This efficient method provide electrical semiconducting and insulator of graphene with a large area and selective pattering, where it turns out the potential for the integration of electronics down to atomic layered scale. © 2013 IEEE. 4 2-
dc.languageeng-
dc.relation.ispartofProceedings - Winter Simulation Conference-
dc.subjectGraphene-
dc.subjectCF plasma and Transistor 4-
dc.titleOne-step formation of atomic-layered transistor by selective fluorination of graphene film-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/INEC.2013.6466037-
dc.identifier.scopuseid_2-s2.0-84874789395-
dc.identifier.spage326-
dc.identifier.epage328-
dc.identifier.issnl0891-7736-

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