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Article: TDDB Reliability Improvement of Cu Damascene with a Bilayer-Structured α-SiC:H Dielectric Barrier
Title | TDDB Reliability Improvement of Cu Damascene with a Bilayer-Structured α-SiC:H Dielectric Barrier |
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Authors | |
Issue Date | 2004 |
Citation | Journal of the Electrochemical Society, 2004, v. 151, n. 2, p. G89-G92 How to Cite? |
Abstract | This work investigates the thermal stability and physical and barrier characteristics of two species of amorphous silicon carbide dielectric films: The nitrogen-containing α-SiCN film with a dielectric constant of 4.9 and the nitrogen-free α-SiC film with a dielectric constant of 3.8. The time-dependent-dielectric-breakdown (TDDB) lifetime of the Cu damascene metallization structure is greatly improved by using an α-SiCN/ α-SiC bilayer dielectric stack as the barrier layer. This improvement is attributed to the lower leakage current of α-SiC, absence of nitridation on the Cu surface, and better adhesion of α-SiC on Cu and organosilicate glass intermetal dielectric. Although the α-SiC film has a very low deposition rate, the α-SiCN/α-SiC bilayer dielectric is a favorable combination for the barrier layer because α-SiCN can protect α-SiC from plasma attack, such as O plasma attack during photoresist stripping and organosilicate plasma attack during organosilicate glass deposition. © 2004 The Electrochemical Society. All rights reserved. 2 |
Persistent Identifier | http://hdl.handle.net/10722/298007 |
ISSN | 2023 Impact Factor: 3.1 2023 SCImago Journal Rankings: 0.868 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chiang, Chiu Chih | - |
dc.contributor.author | Chen, Mao Chieh | - |
dc.contributor.author | Wu, Zhen Cheng | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Jang, Syun Ming | - |
dc.contributor.author | Yu, Chen Hua | - |
dc.contributor.author | Liang, Mong Song | - |
dc.date.accessioned | 2021-04-08T03:07:27Z | - |
dc.date.available | 2021-04-08T03:07:27Z | - |
dc.date.issued | 2004 | - |
dc.identifier.citation | Journal of the Electrochemical Society, 2004, v. 151, n. 2, p. G89-G92 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298007 | - |
dc.description.abstract | This work investigates the thermal stability and physical and barrier characteristics of two species of amorphous silicon carbide dielectric films: The nitrogen-containing α-SiCN film with a dielectric constant of 4.9 and the nitrogen-free α-SiC film with a dielectric constant of 3.8. The time-dependent-dielectric-breakdown (TDDB) lifetime of the Cu damascene metallization structure is greatly improved by using an α-SiCN/ α-SiC bilayer dielectric stack as the barrier layer. This improvement is attributed to the lower leakage current of α-SiC, absence of nitridation on the Cu surface, and better adhesion of α-SiC on Cu and organosilicate glass intermetal dielectric. Although the α-SiC film has a very low deposition rate, the α-SiCN/α-SiC bilayer dielectric is a favorable combination for the barrier layer because α-SiCN can protect α-SiC from plasma attack, such as O plasma attack during photoresist stripping and organosilicate plasma attack during organosilicate glass deposition. © 2004 The Electrochemical Society. All rights reserved. 2 | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of the Electrochemical Society | - |
dc.title | TDDB Reliability Improvement of Cu Damascene with a Bilayer-Structured α-SiC:H Dielectric Barrier | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1149/1.1637358 | - |
dc.identifier.scopus | eid_2-s2.0-1242264921 | - |
dc.identifier.volume | 151 | - |
dc.identifier.issue | 2 | - |
dc.identifier.spage | G89 | - |
dc.identifier.epage | G92 | - |
dc.identifier.isi | WOS:000188182100052 | - |
dc.identifier.issnl | 0013-4651 | - |