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Conference Paper: Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

TitleProperties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
Authors
Nicholas, R. J.Shields, P. A.Child, R. A.Li, L. J.Alphandéry, E.Mason, N. J.Bumby, C.
KeywordsMOVPE
GaSb
InAs
Quantum dots
Quantum well
InSb
Issue Date2004
Citation
Physica E: Low-Dimensional Systems and Nanostructures, 2004, v. 20, n. 3-4, p. 204-210 How to Cite?
DOI: http://dx.doi.org/10.1016/j.physe.2003.08.004
AbstractThe properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm. © 2003 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/298004
ISSN
1386-9477
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.529
ISI Accession Number ID
WOS:000188555200004

 

DC FieldValueLanguage
dc.contributor.authorNicholas, R. J.-
dc.contributor.authorShields, P. A.-
dc.contributor.authorChild, R. A.-
dc.contributor.authorLi, L. J.-
dc.contributor.authorAlphandéry, E.-
dc.contributor.authorMason, N. J.-
dc.contributor.authorBumby, C.-
dc.date.accessioned2021-04-08T03:07:27Z-
dc.date.available2021-04-08T03:07:27Z-
dc.date.issued2004-
dc.identifier.citationPhysica E: Low-Dimensional Systems and Nanostructures, 2004, v. 20, n. 3-4, p. 204-210-
dc.identifier.issn1386-9477-
dc.identifier.urihttp://hdl.handle.net/10722/298004-
dc.description.abstractThe properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm. © 2003 Elsevier B.V. All rights reserved.-
dc.languageeng-
dc.relation.ispartofPhysica E: Low-Dimensional Systems and Nanostructures-
dc.subjectMOVPE-
dc.subjectGaSb-
dc.subjectInAs-
dc.subjectQuantum dots-
dc.subjectQuantum well-
dc.subjectInSb-
dc.titleProperties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.physe.2003.08.004-
dc.identifier.scopuseid_2-s2.0-0347129561-
dc.identifier.volume20-
dc.identifier.issue3-4-
dc.identifier.spage204-
dc.identifier.epage210-
dc.identifier.isiWOS:000188555200004-
dc.identifier.issnl1386-9477-

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