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Article: Epitaxial Growth and Determination of Band Alignment of Bi2Te3-WSe2Vertical van der Waals Heterojunctions

TitleEpitaxial Growth and Determination of Band Alignment of Bi<inf>2</inf>Te<inf>3</inf>-WSe<inf>2</inf>Vertical van der Waals Heterojunctions
Authors
Issue Date2020
Citation
ACS Materials Letters, 2020, v. 2, n. 10, p. 1351-1359 How to Cite?
AbstractArtificial heterojunctions formed by vertical stacking of dissimilar two-dimensional (2D) transition metal dichalcogenide (TMD) monolayer materials in a chosen sequence hold tantalizing prospects for futuristic atomically thin circuits. The emergence of 2D topological insulators (TI), including Bi2Te3, Bi2Se3, and Sb2Te3, represents a new class of 2D building blocks and can complement the existing artificial heterojunctions as a result of their intriguing surface states protected by the time-reversal symmetry. However, the determination of band alignments of such 2D TI/TMD vertical heterojunctions, the key parameter for designing HJ-based electronic/photonic devices, which lies in the development of epitaxy growth, remains in its infancy. Here, we demonstrate the epitaxy growth of 2D TI/TMD vertical heterojunctions comprised of Bi2Te3/WSe2 with atomically clean interfaces that are spectroscopically accessible, and theoretically tractable. Cross-sectional scanning transmission electron microscopy (STEM) images and the presence of interlayer-coupled characteristics from Raman spectroscopy collectively confirm the neat stacking of Bi2Te3/WSe2 with the absence of unwanted containments. Microbeam X-ray photoelectron spectroscopy (μXPS) measurement coupled with the density functional theory (DFT) calculations and electrical characteristics of field effect transistors quantitatively reveals the type-II alignment of vertically stacked of quintuple layers (QL) Bi2Te3/WSe2. Meanwhile, the type-III band emerges when transitioning to multi-quintuple layer (MQL) Bi2Te3/WSe2. The finding here provides a well-defined example of the epitaxy growth paradigm, the interlayer coupling-electronic properties relationship, for these emerging 2D TI/TMDs vertical heterojunctions.
Persistent Identifierhttp://hdl.handle.net/10722/297989

 

DC FieldValueLanguage
dc.contributor.authorYang, Chih Wen-
dc.contributor.authorTang, Hao Ling-
dc.contributor.authorSattar, Shahid-
dc.contributor.authorChiu, Ming Hui-
dc.contributor.authorWan, Yi-
dc.contributor.authorChen, Chia Hao-
dc.contributor.authorKong, Jing-
dc.contributor.authorHuang, Kuo Wei-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorTung, Vincent-
dc.date.accessioned2021-04-08T03:07:25Z-
dc.date.available2021-04-08T03:07:25Z-
dc.date.issued2020-
dc.identifier.citationACS Materials Letters, 2020, v. 2, n. 10, p. 1351-1359-
dc.identifier.urihttp://hdl.handle.net/10722/297989-
dc.description.abstractArtificial heterojunctions formed by vertical stacking of dissimilar two-dimensional (2D) transition metal dichalcogenide (TMD) monolayer materials in a chosen sequence hold tantalizing prospects for futuristic atomically thin circuits. The emergence of 2D topological insulators (TI), including Bi2Te3, Bi2Se3, and Sb2Te3, represents a new class of 2D building blocks and can complement the existing artificial heterojunctions as a result of their intriguing surface states protected by the time-reversal symmetry. However, the determination of band alignments of such 2D TI/TMD vertical heterojunctions, the key parameter for designing HJ-based electronic/photonic devices, which lies in the development of epitaxy growth, remains in its infancy. Here, we demonstrate the epitaxy growth of 2D TI/TMD vertical heterojunctions comprised of Bi2Te3/WSe2 with atomically clean interfaces that are spectroscopically accessible, and theoretically tractable. Cross-sectional scanning transmission electron microscopy (STEM) images and the presence of interlayer-coupled characteristics from Raman spectroscopy collectively confirm the neat stacking of Bi2Te3/WSe2 with the absence of unwanted containments. Microbeam X-ray photoelectron spectroscopy (μXPS) measurement coupled with the density functional theory (DFT) calculations and electrical characteristics of field effect transistors quantitatively reveals the type-II alignment of vertically stacked of quintuple layers (QL) Bi2Te3/WSe2. Meanwhile, the type-III band emerges when transitioning to multi-quintuple layer (MQL) Bi2Te3/WSe2. The finding here provides a well-defined example of the epitaxy growth paradigm, the interlayer coupling-electronic properties relationship, for these emerging 2D TI/TMDs vertical heterojunctions.-
dc.languageeng-
dc.relation.ispartofACS Materials Letters-
dc.titleEpitaxial Growth and Determination of Band Alignment of Bi<inf>2</inf>Te<inf>3</inf>-WSe<inf>2</inf>Vertical van der Waals Heterojunctions-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsmaterialslett.0c00254-
dc.identifier.scopuseid_2-s2.0-85094927800-
dc.identifier.volume2-
dc.identifier.issue10-
dc.identifier.spage1351-
dc.identifier.epage1359-
dc.identifier.eissn2639-4979-
dc.identifier.issnl2639-4979-

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