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Conference Paper: Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si

TitleGiant Electroresistance Switching of Two-dimensional Ferroelectric α-In<inf>2</inf>Se<inf>3</inf>on p<sup>+</sup>-Si
Authors
Lee, Ko ChunRetamal, Jose Ramon DuranXue, FeiCheng, BinTang, Hao LingChiu, Ming HuiHu, Wei JinWu, Chih I.Chen, Mei HsinLi, Lain JongLien, Chen HsinHe, Jr Hau
Issue Date2020
Citation
2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, 2020, p. 88-89 How to Cite?
DOI: http://dx.doi.org/10.1109/VLSI-TSA48913.2020.9203707
AbstractRecently, the demonstration of the ferroelectricity of phase In2Se3( -In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of -In2Se3. By forming the hetero-junction of -In2Se3 with the highly degenerated \mathrmp+ -Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 106.
Persistent Identifierhttp://hdl.handle.net/10722/297985

 

DC FieldValueLanguage
dc.contributor.authorLee, Ko Chun-
dc.contributor.authorRetamal, Jose Ramon Duran-
dc.contributor.authorXue, Fei-
dc.contributor.authorCheng, Bin-
dc.contributor.authorTang, Hao Ling-
dc.contributor.authorChiu, Ming Hui-
dc.contributor.authorHu, Wei Jin-
dc.contributor.authorWu, Chih I.-
dc.contributor.authorChen, Mei Hsin-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLien, Chen Hsin-
dc.contributor.authorHe, Jr Hau-
dc.date.accessioned2021-04-08T03:07:24Z-
dc.date.available2021-04-08T03:07:24Z-
dc.date.issued2020-
dc.identifier.citation2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, 2020, p. 88-89-
dc.identifier.urihttp://hdl.handle.net/10722/297985-
dc.description.abstractRecently, the demonstration of the ferroelectricity of phase In2Se3( -In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of -In2Se3. By forming the hetero-junction of -In2Se3 with the highly degenerated \mathrmp+ -Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 106.-
dc.languageeng-
dc.relation.ispartof2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020-
dc.titleGiant Electroresistance Switching of Two-dimensional Ferroelectric α-In<inf>2</inf>Se<inf>3</inf>on p<sup>+</sup>-Si-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/VLSI-TSA48913.2020.9203707-
dc.identifier.scopuseid_2-s2.0-85093697740-
dc.identifier.spage88-
dc.identifier.epage89-

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