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Article: Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

TitleDetermination of band alignment in the single-layer MoS<inf>2</inf>/WSe<inf>2</inf> heterojunction
Authors
Issue Date2015
Citation
Nature Communications, 2015, v. 6, article no. 7666 How to Cite?
AbstractThe emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS and WSe with a valence band offset value of 0.83eV and a conduction band offset of 0.76eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe and MoS are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94eV is obtained from density functional theory, consistent with the experimental determination. 2 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/297973
PubMed Central ID

 

DC FieldValueLanguage
dc.contributor.authorChiu, Ming Hui-
dc.contributor.authorZhang, Chendong-
dc.contributor.authorShiu, Hung Wei-
dc.contributor.authorChuu, Chih Piao-
dc.contributor.authorChen, Chang Hsiao-
dc.contributor.authorChang, Chih Yuan S.-
dc.contributor.authorChen, Chia Hao-
dc.contributor.authorChou, Mei Yin-
dc.contributor.authorShih, Chih Kang-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:07:22Z-
dc.date.available2021-04-08T03:07:22Z-
dc.date.issued2015-
dc.identifier.citationNature Communications, 2015, v. 6, article no. 7666-
dc.identifier.urihttp://hdl.handle.net/10722/297973-
dc.description.abstractThe emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS and WSe with a valence band offset value of 0.83eV and a conduction band offset of 0.76eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe and MoS are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94eV is obtained from density functional theory, consistent with the experimental determination. 2 2 2 2-
dc.languageeng-
dc.relation.ispartofNature Communications-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleDetermination of band alignment in the single-layer MoS<inf>2</inf>/WSe<inf>2</inf> heterojunction-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1038/ncomms8666-
dc.identifier.pmid26179885-
dc.identifier.pmcidPMC4518320-
dc.identifier.scopuseid_2-s2.0-84937598295-
dc.identifier.volume6-
dc.identifier.spagearticle no. 7666-
dc.identifier.epagearticle no. 7666-
dc.identifier.eissn2041-1723-
dc.identifier.issnl2041-1723-

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