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Article: Strain-Induced Spectral Red-Shifting from Nanoscale Frustum Arrays Fabricated over InGaN/GaN Quantum Wells for Light-Emitting Applications
Title | Strain-Induced Spectral Red-Shifting from Nanoscale Frustum Arrays Fabricated over InGaN/GaN Quantum Wells for Light-Emitting Applications |
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Authors | |
Keywords | strain engineering bandgap engineering gallium nitride nanosphere lithography molecular dynamics |
Issue Date | 2021 |
Publisher | American Chemical Society. The Journal's web site is located at http://pubs.acs.org/acsnanomaterials |
Citation | ACS Applied Nano Materials, 2021, v. 4 n. 1, p. 666-672 How to Cite? |
Abstract | While spectral blue-shifting caused by nanostructuring of InGaN/GaN quantum wells has been widely reported for altering the emission color of light-emitting diodes, the same cannot be said for spectral red-shifting. It is well-known that nanostructuring of the quantum wells gives rise to relaxation of the strain incurred in the quantum wells, reducing the quantum confined stark effect with a consequence of spectral shifting to shorter wavelengths. In this report, we demonstrate a nanostructure configuration that produces the opposite effect, spectral red-shifting, by increasing the strain in the quantum wells through the formation of an inverted nanoconical-frustum array over the quantum wells, without allowing the nanostructures to penetrate through the quantum wells. Under such conditions, spectral red-shifting of the photoluminescence spectrum can be observed, consistent with the prediction of strain induction in the quantum wells by molecular dynamics simulations. Experimentally, spectral red-shift of the photoluminescence spectrum by up to 7.6 nm has been observed, when the proposed nanostructures are fabricated on InGaN/GaN quantum wells grown on a c-plane sapphire substrate with a nominal emission wavelength of ∼560 nm. |
Persistent Identifier | http://hdl.handle.net/10722/297287 |
ISSN | 2023 Impact Factor: 5.3 2023 SCImago Journal Rankings: 1.134 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Fu, WY | - |
dc.contributor.author | Choi, HW | - |
dc.date.accessioned | 2021-03-08T07:16:50Z | - |
dc.date.available | 2021-03-08T07:16:50Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | ACS Applied Nano Materials, 2021, v. 4 n. 1, p. 666-672 | - |
dc.identifier.issn | 2574-0970 | - |
dc.identifier.uri | http://hdl.handle.net/10722/297287 | - |
dc.description.abstract | While spectral blue-shifting caused by nanostructuring of InGaN/GaN quantum wells has been widely reported for altering the emission color of light-emitting diodes, the same cannot be said for spectral red-shifting. It is well-known that nanostructuring of the quantum wells gives rise to relaxation of the strain incurred in the quantum wells, reducing the quantum confined stark effect with a consequence of spectral shifting to shorter wavelengths. In this report, we demonstrate a nanostructure configuration that produces the opposite effect, spectral red-shifting, by increasing the strain in the quantum wells through the formation of an inverted nanoconical-frustum array over the quantum wells, without allowing the nanostructures to penetrate through the quantum wells. Under such conditions, spectral red-shifting of the photoluminescence spectrum can be observed, consistent with the prediction of strain induction in the quantum wells by molecular dynamics simulations. Experimentally, spectral red-shift of the photoluminescence spectrum by up to 7.6 nm has been observed, when the proposed nanostructures are fabricated on InGaN/GaN quantum wells grown on a c-plane sapphire substrate with a nominal emission wavelength of ∼560 nm. | - |
dc.language | eng | - |
dc.publisher | American Chemical Society. The Journal's web site is located at http://pubs.acs.org/acsnanomaterials | - |
dc.relation.ispartof | ACS Applied Nano Materials | - |
dc.rights | This document is the Accepted Manuscript version of a Published Work that appeared in final form in [ACS Applied Nano Materials], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html]. | - |
dc.subject | strain engineering | - |
dc.subject | bandgap engineering | - |
dc.subject | gallium nitride | - |
dc.subject | nanosphere lithography | - |
dc.subject | molecular dynamics | - |
dc.title | Strain-Induced Spectral Red-Shifting from Nanoscale Frustum Arrays Fabricated over InGaN/GaN Quantum Wells for Light-Emitting Applications | - |
dc.type | Article | - |
dc.identifier.email | Fu, WY: wyfu@hku.hk | - |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
dc.identifier.authority | Fu, WY=rp02840 | - |
dc.identifier.authority | Choi, HW=rp00108 | - |
dc.description.nature | postprint | - |
dc.identifier.doi | 10.1021/acsanm.0c02939 | - |
dc.identifier.scopus | eid_2-s2.0-85099246190 | - |
dc.identifier.hkuros | 321550 | - |
dc.identifier.volume | 4 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 666 | - |
dc.identifier.epage | 672 | - |
dc.identifier.isi | WOS:000613246600072 | - |
dc.publisher.place | United States | - |