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Article: Efficient All-Inorganic Perovskite Light-Emitting Diodes with Cesium Tungsten Bronze as a Hole-Transporting Layer

TitleEfficient All-Inorganic Perovskite Light-Emitting Diodes with Cesium Tungsten Bronze as a Hole-Transporting Layer
Authors
Issue Date2020
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/loi/jpclcd
Citation
The Journal of Physical Chemistry Letters, 2020, v. 11 n. 18, p. 7624-7629 How to Cite?
AbstractThe realization of high-performance optoelectronic devices requires excellent charge-transporting layers and efficient carrier recombination. Herein, we synthesized cesium tungsten bronze (Cs0.32WO3) nanocrystals and utilized them as the hole-transporting material to fabricate all-inorganic perovskite light-emitting diodes (PeLEDs). Due to the excellent carrier balance characteristics via comparison between the hole-only device and electron-only device, the all-inorganic PeLEDs with CsPbBr3 as the light-emitting layer present the maximum current efficiency of 31.51 cd/A and external quantum efficiency (EQE) of 8.48%, which are self-evidently enhanced compared with the PEDOT:PSS (14.78 cd/A, 4.03%) and WO3 (24.75 cd/A, 6.18%) based devices. Considering the remarkably improved device performance, the proposed HTL of Cs0.32WO3 is promising, acting as a favorable building block for high-efficiency light-emitting devices.
Persistent Identifierhttp://hdl.handle.net/10722/293413
ISSN
2023 Impact Factor: 4.8
2023 SCImago Journal Rankings: 1.586
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLing, FCC-
dc.contributor.authorZhuo, MP-
dc.contributor.authorFang, XC-
dc.contributor.authorZhou, XQ-
dc.contributor.authorWang, XD-
dc.contributor.authorChen, WF-
dc.contributor.authorLiao, LS-
dc.date.accessioned2020-11-23T08:16:24Z-
dc.date.available2020-11-23T08:16:24Z-
dc.date.issued2020-
dc.identifier.citationThe Journal of Physical Chemistry Letters, 2020, v. 11 n. 18, p. 7624-7629-
dc.identifier.issn1948-7185-
dc.identifier.urihttp://hdl.handle.net/10722/293413-
dc.description.abstractThe realization of high-performance optoelectronic devices requires excellent charge-transporting layers and efficient carrier recombination. Herein, we synthesized cesium tungsten bronze (Cs0.32WO3) nanocrystals and utilized them as the hole-transporting material to fabricate all-inorganic perovskite light-emitting diodes (PeLEDs). Due to the excellent carrier balance characteristics via comparison between the hole-only device and electron-only device, the all-inorganic PeLEDs with CsPbBr3 as the light-emitting layer present the maximum current efficiency of 31.51 cd/A and external quantum efficiency (EQE) of 8.48%, which are self-evidently enhanced compared with the PEDOT:PSS (14.78 cd/A, 4.03%) and WO3 (24.75 cd/A, 6.18%) based devices. Considering the remarkably improved device performance, the proposed HTL of Cs0.32WO3 is promising, acting as a favorable building block for high-efficiency light-emitting devices.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/loi/jpclcd-
dc.relation.ispartofThe Journal of Physical Chemistry Letters-
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].-
dc.titleEfficient All-Inorganic Perovskite Light-Emitting Diodes with Cesium Tungsten Bronze as a Hole-Transporting Layer-
dc.typeArticle-
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hk-
dc.identifier.authorityLing, FCC=rp00747-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acs.jpclett.0c02304-
dc.identifier.pmid32820925-
dc.identifier.scopuseid_2-s2.0-85091191186-
dc.identifier.hkuros319397-
dc.identifier.volume11-
dc.identifier.issue18-
dc.identifier.spage7624-
dc.identifier.epage7629-
dc.identifier.isiWOS:000574906500023-
dc.publisher.placeUnited States-

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