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Article: Ambipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

TitleAmbipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides
Authors
Issue Date2020
Citation
Advanced Materials Interfaces, 2020, v. 7, p. 1901628 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/289657

 

DC FieldValueLanguage
dc.contributor.authorXu, H-
dc.contributor.authorHan, XY-
dc.contributor.authorLiu, W-
dc.contributor.authorLiu, P-
dc.contributor.authorFang, HH-
dc.contributor.authorLi, X-
dc.contributor.authorLi, ZN-
dc.contributor.authorGuo, J-
dc.contributor.authorXiang, B-
dc.contributor.authorHu, W-
dc.contributor.authorParkin, IP-
dc.contributor.authorWu, J-
dc.contributor.authorGuo, ZX-
dc.contributor.authorLiu, HY-
dc.date.accessioned2020-10-22T08:15:38Z-
dc.date.available2020-10-22T08:15:38Z-
dc.date.issued2020-
dc.identifier.citationAdvanced Materials Interfaces, 2020, v. 7, p. 1901628-
dc.identifier.urihttp://hdl.handle.net/10722/289657-
dc.languageeng-
dc.relation.ispartofAdvanced Materials Interfaces-
dc.titleAmbipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides -
dc.typeArticle-
dc.identifier.emailGuo, ZX: zxguo@hku.hk-
dc.identifier.authorityGuo, ZX=rp02451-
dc.identifier.doi10.1002/admi.201901628-
dc.identifier.scopuseid_2-s2.0-85076098490-
dc.identifier.hkuros317123-
dc.identifier.volume7-
dc.identifier.spage1901628-
dc.identifier.epage1901628-

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