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Article: Electrical and optical properties in O-polar and Zn-polar ZnO films grown by pulsed laser deposition

TitleElectrical and optical properties in O-polar and Zn-polar ZnO films grown by pulsed laser deposition
Authors
KeywordsZinc oxide
Polarity
Pulsed laser deposition
Magnesium oxide
Buffer layer
Issue Date2020
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2020, v. 711, p. article no. 138303 How to Cite?
AbstractO-polar and Zn-polar ZnO films were grown on c-sapphire by pulsed laser deposition. Positron annihilation spectroscopy study reveals that the VZn-related defects in the ZnO films with different polarities are different in structure and their thermal evolution is different. Hall effect measurement and luminescence spectroscopy reveal that the electrical and optical properties and their corresponding thermal evolution are strongly dependent on the polarity of the film. The luminescence spectra of the as-grown Zn-polar ZnO film is signified by a negligible green defect emission (at ~ 2.4 eV) and strong near band edge emission as compared with the O-polar film. The as-grown Zn-polar film exhibited a lower electron concentration (2 × 1018 cm−3) than that of the O-polar film (6 × 1018 cm−3); this difference is attributed to their different H concentrations. For the O-polar film, the electron concentration decreased with annealing temperature Tanneal, reaching a minimum at 700°C and then increased to 4 × 1018 cm−3 at Tanneal = 900 °C. In comparison, the electron concentration of the Zn-polar ZnO film monotonically decreased with Tanneal attaining a value of ~1 × 1017 cm−3 at Tanneal = 900 °C, 40 times smaller than that of the O-polar film. The cause for the differences in the optical and electrical properties for the O-polar and Zn-polar films is explained by the presence of different defects in these films.
Persistent Identifierhttp://hdl.handle.net/10722/289325
ISSN
2023 Impact Factor: 2.0
2023 SCImago Journal Rankings: 0.400
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLuo, C-
dc.contributor.authorRahman, MA-
dc.contributor.authorPhillips, MR-
dc.contributor.authorTon-That, C-
dc.contributor.authorButterling, M-
dc.contributor.authorWagner, A-
dc.contributor.authorLing, FCC-
dc.date.accessioned2020-10-22T08:11:03Z-
dc.date.available2020-10-22T08:11:03Z-
dc.date.issued2020-
dc.identifier.citationThin Solid Films, 2020, v. 711, p. article no. 138303-
dc.identifier.issn0040-6090-
dc.identifier.urihttp://hdl.handle.net/10722/289325-
dc.description.abstractO-polar and Zn-polar ZnO films were grown on c-sapphire by pulsed laser deposition. Positron annihilation spectroscopy study reveals that the VZn-related defects in the ZnO films with different polarities are different in structure and their thermal evolution is different. Hall effect measurement and luminescence spectroscopy reveal that the electrical and optical properties and their corresponding thermal evolution are strongly dependent on the polarity of the film. The luminescence spectra of the as-grown Zn-polar ZnO film is signified by a negligible green defect emission (at ~ 2.4 eV) and strong near band edge emission as compared with the O-polar film. The as-grown Zn-polar film exhibited a lower electron concentration (2 × 1018 cm−3) than that of the O-polar film (6 × 1018 cm−3); this difference is attributed to their different H concentrations. For the O-polar film, the electron concentration decreased with annealing temperature Tanneal, reaching a minimum at 700°C and then increased to 4 × 1018 cm−3 at Tanneal = 900 °C. In comparison, the electron concentration of the Zn-polar ZnO film monotonically decreased with Tanneal attaining a value of ~1 × 1017 cm−3 at Tanneal = 900 °C, 40 times smaller than that of the O-polar film. The cause for the differences in the optical and electrical properties for the O-polar and Zn-polar films is explained by the presence of different defects in these films.-
dc.languageeng-
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf-
dc.relation.ispartofThin Solid Films-
dc.subjectZinc oxide-
dc.subjectPolarity-
dc.subjectPulsed laser deposition-
dc.subjectMagnesium oxide-
dc.subjectBuffer layer-
dc.titleElectrical and optical properties in O-polar and Zn-polar ZnO films grown by pulsed laser deposition-
dc.typeArticle-
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hk-
dc.identifier.authorityLing, FCC=rp00747-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.tsf.2020.138303-
dc.identifier.scopuseid_2-s2.0-85089795299-
dc.identifier.hkuros315972-
dc.identifier.volume711-
dc.identifier.spagearticle no. 138303-
dc.identifier.epagearticle no. 138303-
dc.identifier.isiWOS:000569418600006-
dc.publisher.placeSwitzerland-
dc.identifier.issnl0040-6090-

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