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Article: Surface Silanization of Polyimide for Autocatalytic Metallization

TitleSurface Silanization of Polyimide for Autocatalytic Metallization
Authors
KeywordsAmine functional groups
Dual layer structure
Flexible copper clad laminate
Flexible printed circuit boards
Poly vinyl pyrrolidone
Issue Date2020
PublisherSpringer New York LLC. The Journal's web site is located at http://www.springer.com/materials/journal/11837
Citation
JOM, 2020, v. 72, p. 3529-3537 How to Cite?
AbstractDue to its superior chemical stability, mechanical strength, light weight, and flexibility, polyimide (PI) has been widely used as a polymeric substrate of flexible printed circuit boards such as flexible copper clad laminates (FCCLs). The development of an adhesiveless dual-layer structure is imperative for the application of FCCLs in globalized 5G consumer electronics. In this work, autocatalytic metallization on a silane-grafted PI film was developed to fabricate a high-quality Cu/PI substrate. PI was functionalized by amine-terminated organosilanes to load polyvinylpyrrolidone-capped Pd nanoclusters (PVP-nPd) as a catalyst. The effects of organosilanes with different numbers of amine functional groups on the adsorption of the PVP-nPd catalyst and the subsequent metallization of Cu were systematically investigated. Comprehensive surface characterizations were carried out on the PI films before and after silanization. The organosilane bearing three amine groups was found to outperform its counterpart with one amine group, exhibiting a fourfold increase in catalyst adsorption, which also improved the metallization efficiency.
Persistent Identifierhttp://hdl.handle.net/10722/288107
ISSN
2023 Impact Factor: 2.1
2023 SCImago Journal Rankings: 0.551
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, JN-
dc.contributor.authorSil, MC-
dc.contributor.authorCHENG, R-
dc.contributor.authorFeng, SP-
dc.contributor.authorChen, CM-
dc.date.accessioned2020-10-05T12:07:58Z-
dc.date.available2020-10-05T12:07:58Z-
dc.date.issued2020-
dc.identifier.citationJOM, 2020, v. 72, p. 3529-3537-
dc.identifier.issn1047-4838-
dc.identifier.urihttp://hdl.handle.net/10722/288107-
dc.description.abstractDue to its superior chemical stability, mechanical strength, light weight, and flexibility, polyimide (PI) has been widely used as a polymeric substrate of flexible printed circuit boards such as flexible copper clad laminates (FCCLs). The development of an adhesiveless dual-layer structure is imperative for the application of FCCLs in globalized 5G consumer electronics. In this work, autocatalytic metallization on a silane-grafted PI film was developed to fabricate a high-quality Cu/PI substrate. PI was functionalized by amine-terminated organosilanes to load polyvinylpyrrolidone-capped Pd nanoclusters (PVP-nPd) as a catalyst. The effects of organosilanes with different numbers of amine functional groups on the adsorption of the PVP-nPd catalyst and the subsequent metallization of Cu were systematically investigated. Comprehensive surface characterizations were carried out on the PI films before and after silanization. The organosilane bearing three amine groups was found to outperform its counterpart with one amine group, exhibiting a fourfold increase in catalyst adsorption, which also improved the metallization efficiency.-
dc.languageeng-
dc.publisherSpringer New York LLC. The Journal's web site is located at http://www.springer.com/materials/journal/11837-
dc.relation.ispartofJOM-
dc.rightsThis is a post-peer-review, pre-copyedit version of an article published in [insert journal title]. The final authenticated version is available online at: https://doi.org/[insert DOI]-
dc.subjectAmine functional groups-
dc.subjectDual layer structure-
dc.subjectFlexible copper clad laminate-
dc.subjectFlexible printed circuit boards-
dc.subjectPoly vinyl pyrrolidone-
dc.titleSurface Silanization of Polyimide for Autocatalytic Metallization-
dc.typeArticle-
dc.identifier.emailFeng, SP: hpfeng@hku.hk-
dc.identifier.authorityFeng, SP=rp01533-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s11837-020-04286-2-
dc.identifier.scopuseid_2-s2.0-85088666026-
dc.identifier.hkuros315433-
dc.identifier.volume72-
dc.identifier.spage3529-
dc.identifier.epage3537-
dc.identifier.isiWOS:000553632400001-
dc.publisher.placeUnited States-
dc.identifier.issnl1047-4838-

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