File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1088/1361-6528/ab5b2d
- Scopus: eid_2-s2.0-85077937275
- PMID: 31766028
- WOS: WOS:000520162600001
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Optimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors
Title | Optimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors |
---|---|
Authors | |
Keywords | Capacitance-equivalent thickness Interface state density MoS2 FETs Oxide capacitance Subthreshold swing |
Issue Date | 2020 |
Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano |
Citation | Nanotechnology, 2020, v. 31 n. 13, p. article no. 135206 How to Cite? |
Abstract | In this work, we investigate the effects on the electrical properties of few-layered MoS2 field-effect transistors (FETs) following Al incorporation into ZrO2 as the gate dielectrics of the devices. A large improvement in device performance is achieved with the Al-doped ZrO2 gate dielectric when Zr:Al = 1:1. The relevant MoS2 transistor exhibits the best electrical characteristics: high carrier mobility of 40.6 cm2 V−1 s−1 (41% higher than that of the control sample, and an intrinsic mobility of 68.0 cm2 V−1 s−1), a small subthreshold swing of 143 mV dec−1, high on/off current ratio of 6 × 106 and small threshold voltage of 0.71 V. These are attributed to the facts that (i) Al incorporation into ZrO2 can decrease its oxygen vacancies; densify the dielectric film; and smooth the gate dielectric surface, thus reducing the traps at/near the Zr0.5Al0.5Oy/MoS2 interface and the gate leakage current; (ii) adjusting the dielectric constant of the gate dielectric to an appropriate value, which achieves a reasonable trade-off between the gate screening effect on the Coulomb-impurity scattering and the surface optical phonon scattering. These results demonstrate that optimized Zr0.5Al0.5Oy is a potential gate dielectric material for MoS2 FET applications. |
Persistent Identifier | http://hdl.handle.net/10722/288078 |
ISSN | 2023 Impact Factor: 2.9 2023 SCImago Journal Rankings: 0.631 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Song, X | - |
dc.contributor.author | Xu, J | - |
dc.contributor.author | Liu, L | - |
dc.contributor.author | Deng, Y | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | Tang, WM | - |
dc.date.accessioned | 2020-10-05T12:07:33Z | - |
dc.date.available | 2020-10-05T12:07:33Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Nanotechnology, 2020, v. 31 n. 13, p. article no. 135206 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10722/288078 | - |
dc.description.abstract | In this work, we investigate the effects on the electrical properties of few-layered MoS2 field-effect transistors (FETs) following Al incorporation into ZrO2 as the gate dielectrics of the devices. A large improvement in device performance is achieved with the Al-doped ZrO2 gate dielectric when Zr:Al = 1:1. The relevant MoS2 transistor exhibits the best electrical characteristics: high carrier mobility of 40.6 cm2 V−1 s−1 (41% higher than that of the control sample, and an intrinsic mobility of 68.0 cm2 V−1 s−1), a small subthreshold swing of 143 mV dec−1, high on/off current ratio of 6 × 106 and small threshold voltage of 0.71 V. These are attributed to the facts that (i) Al incorporation into ZrO2 can decrease its oxygen vacancies; densify the dielectric film; and smooth the gate dielectric surface, thus reducing the traps at/near the Zr0.5Al0.5Oy/MoS2 interface and the gate leakage current; (ii) adjusting the dielectric constant of the gate dielectric to an appropriate value, which achieves a reasonable trade-off between the gate screening effect on the Coulomb-impurity scattering and the surface optical phonon scattering. These results demonstrate that optimized Zr0.5Al0.5Oy is a potential gate dielectric material for MoS2 FET applications. | - |
dc.language | eng | - |
dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano | - |
dc.relation.ispartof | Nanotechnology | - |
dc.rights | Nanotechnology. Copyright © Institute of Physics Publishing. | - |
dc.rights | This is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI]. | - |
dc.subject | Capacitance-equivalent thickness | - |
dc.subject | Interface state density | - |
dc.subject | MoS2 FETs | - |
dc.subject | Oxide capacitance | - |
dc.subject | Subthreshold swing | - |
dc.title | Optimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1088/1361-6528/ab5b2d | - |
dc.identifier.pmid | 31766028 | - |
dc.identifier.scopus | eid_2-s2.0-85077937275 | - |
dc.identifier.hkuros | 315182 | - |
dc.identifier.volume | 31 | - |
dc.identifier.issue | 13 | - |
dc.identifier.spage | article no. 135206 | - |
dc.identifier.epage | article no. 135206 | - |
dc.identifier.isi | WOS:000520162600001 | - |
dc.publisher.place | United Kingdom | - |
dc.identifier.issnl | 0957-4484 | - |