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Article: Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment
Title | Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment |
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Authors | |
Keywords | Transistors Plasmas Sulfur Hafnium oxide Molybdenum |
Issue Date | 2019 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 |
Citation | IEEE Transactions on Electron Devices, 2019, v. 66 n. 10, p. 4337-4342 How to Cite? |
Abstract | The effects of treating the HfO 2 gate dielectric in different plasmas (O 2 , N 2 , and NH 3 ) on the electrical characteristics of a back-gated MoS 2 transistor are investigated. It is found that the electrical properties of the device improved after HfO 2 is treated by these plasmas, in which NH 3 -plasma treatment results in the best electrical characteristics: high ON-OFF ratio of 1.26×10 7 , high extrinsic carrier mobility of 61.5 cm 2 /V·s, small subthreshold swing (SS) of 111 mV/dec, low interface-state density of 2.79 × 10 12 eV -1 ·cm -2 , and small hysteresis of 43 mV. These should be attributed to the incorporation of more N into the HfO 2 film by the NH 3 plasma to repair the oxygen vacancies and increase the k value of the HfO 2 film. Moreover, H from the NH 3 plasma effectively passivates the dangling bonds at/near the HfO 2 /MoS 2 interface, thus creating an excellent MoS 2 /HfO 2 interface. |
Persistent Identifier | http://hdl.handle.net/10722/288076 |
ISSN | 2023 Impact Factor: 2.9 2023 SCImago Journal Rankings: 0.785 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Zhao, X | - |
dc.contributor.author | Xu, J | - |
dc.contributor.author | Liu, L | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | Tang, WM | - |
dc.date.accessioned | 2020-10-05T12:07:31Z | - |
dc.date.available | 2020-10-05T12:07:31Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, 2019, v. 66 n. 10, p. 4337-4342 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10722/288076 | - |
dc.description.abstract | The effects of treating the HfO 2 gate dielectric in different plasmas (O 2 , N 2 , and NH 3 ) on the electrical characteristics of a back-gated MoS 2 transistor are investigated. It is found that the electrical properties of the device improved after HfO 2 is treated by these plasmas, in which NH 3 -plasma treatment results in the best electrical characteristics: high ON-OFF ratio of 1.26×10 7 , high extrinsic carrier mobility of 61.5 cm 2 /V·s, small subthreshold swing (SS) of 111 mV/dec, low interface-state density of 2.79 × 10 12 eV -1 ·cm -2 , and small hysteresis of 43 mV. These should be attributed to the incorporation of more N into the HfO 2 film by the NH 3 plasma to repair the oxygen vacancies and increase the k value of the HfO 2 film. Moreover, H from the NH 3 plasma effectively passivates the dangling bonds at/near the HfO 2 /MoS 2 interface, thus creating an excellent MoS 2 /HfO 2 interface. | - |
dc.language | eng | - |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.rights | IEEE Transactions on Electron Devices. Copyright © IEEE. | - |
dc.rights | ©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | - |
dc.subject | Transistors | - |
dc.subject | Plasmas | - |
dc.subject | Sulfur | - |
dc.subject | Hafnium oxide | - |
dc.subject | Molybdenum | - |
dc.title | Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/TED.2019.2934186 | - |
dc.identifier.scopus | eid_2-s2.0-85077738076 | - |
dc.identifier.hkuros | 315177 | - |
dc.identifier.volume | 66 | - |
dc.identifier.issue | 10 | - |
dc.identifier.spage | 4337 | - |
dc.identifier.epage | 4342 | - |
dc.identifier.isi | WOS:000487477600034 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 0018-9383 | - |