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Article: Controlled Growth of In2Se3 Low-Dimensional Structure with Ferroelectric Properties by Chemical Vapor Deposition

TitleControlled Growth of In2Se3 Low-Dimensional Structure with Ferroelectric Properties by Chemical Vapor Deposition
Authors
RASHID, R
Issue Date2020
Citation
University of Hong Kong, 2020, p. 1-132 (Forthcoming) How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/287289

 

DC FieldValueLanguage
dc.contributor.authorRASHID, R-
dc.date.accessioned2020-09-22T02:58:44Z-
dc.date.available2020-09-22T02:58:44Z-
dc.date.issued2020-
dc.identifier.citationUniversity of Hong Kong, 2020, p. 1-132 (Forthcoming)-
dc.identifier.urihttp://hdl.handle.net/10722/287289-
dc.languageeng-
dc.relation.ispartofUniversity of Hong Kong-
dc.titleControlled Growth of In2Se3 Low-Dimensional Structure with Ferroelectric Properties by Chemical Vapor Deposition-
dc.typeArticle-
dc.identifier.hkuros314228-
dc.identifier.spage1-
dc.identifier.epage132-
dc.publisher.placeHong Kong-

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