Scalable 3D Ta:SiO<inf>x</inf> Memristive Devices

Abstract

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim A highly reliable memristive device based on tantalum-doped silicon oxide is reported, which exhibits high uniformity, robust endurance (≈1 × 109 cycles), fast switching speed, long retention, and analog conductance modulation. Devices with junction areas ranging from microscale to as small as 60 × 15 nm2 are fabricated and electrically characterized. ON-/OFF- conductance and reset current show weak area dependence when the device is relatively large, and they become proportional to the device area when further scaled down. Two-layer devices with repeatable switching behavior are achieved. The current study shows the potentials of Ta:SiO2-based 3D vertical devices for memory and computing applications. It also suggests that doping of the switching layer is an efficient approach to engineer the performance of memristive devices.