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Article: Silicon Oxide (SiOx): A Promising Material for Resistance Switching?

TitleSilicon Oxide (SiO<inf>x</inf>): A Promising Material for Resistance Switching?
Authors
Keywordsmemristors
silicon oxide
resistance switching
ReRAM
Issue Date2018
Citation
Advanced Materials, 2018, v. 30, n. 43, article no. 1801187 How to Cite?
Abstract© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Interest in resistance switching is currently growing apace. The promise of novel high-density, low-power, high-speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications in hardware acceleration for machine learning and artificial intelligence, and for neuromorphic computing. A very wide range of material systems exhibit resistance switching, a number of which—primarily transition metal oxides—are currently being investigated as complementary metal–oxide–semiconductor (CMOS)-compatible technologies. Here, the case is made for silicon oxide, perhaps the most CMOS-compatible dielectric, yet one that has had comparatively little attention as a resistance-switching material. Herein, a taxonomy of switching mechanisms in silicon oxide is presented, and the current state of the art in modeling, understanding fundamental switching mechanisms, and exciting device applications is summarized. In conclusion, silicon oxide is an excellent choice for resistance-switching technologies, offering a number of compelling advantages over competing material systems.
DescriptionAccepted manuscript is available on the publisher website.
Persistent Identifierhttp://hdl.handle.net/10722/286974
ISSN
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMehonic, Adnan-
dc.contributor.authorShluger, Alexander L.-
dc.contributor.authorGao, David-
dc.contributor.authorValov, Ilia-
dc.contributor.authorMiranda, Enrique-
dc.contributor.authorIelmini, Daniele-
dc.contributor.authorBricalli, Alessandro-
dc.contributor.authorAmbrosi, Elia-
dc.contributor.authorLi, Can-
dc.contributor.authorYang, J. Joshua-
dc.contributor.authorXia, Qiangfei-
dc.contributor.authorKenyon, Anthony J.-
dc.date.accessioned2020-09-07T11:46:10Z-
dc.date.available2020-09-07T11:46:10Z-
dc.date.issued2018-
dc.identifier.citationAdvanced Materials, 2018, v. 30, n. 43, article no. 1801187-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/286974-
dc.descriptionAccepted manuscript is available on the publisher website.-
dc.description.abstract© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Interest in resistance switching is currently growing apace. The promise of novel high-density, low-power, high-speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications in hardware acceleration for machine learning and artificial intelligence, and for neuromorphic computing. A very wide range of material systems exhibit resistance switching, a number of which—primarily transition metal oxides—are currently being investigated as complementary metal–oxide–semiconductor (CMOS)-compatible technologies. Here, the case is made for silicon oxide, perhaps the most CMOS-compatible dielectric, yet one that has had comparatively little attention as a resistance-switching material. Herein, a taxonomy of switching mechanisms in silicon oxide is presented, and the current state of the art in modeling, understanding fundamental switching mechanisms, and exciting device applications is summarized. In conclusion, silicon oxide is an excellent choice for resistance-switching technologies, offering a number of compelling advantages over competing material systems.-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjectmemristors-
dc.subjectsilicon oxide-
dc.subjectresistance switching-
dc.subjectReRAM-
dc.titleSilicon Oxide (SiO<inf>x</inf>): A Promising Material for Resistance Switching?-
dc.typeArticle-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1002/adma.201801187-
dc.identifier.pmid29957849-
dc.identifier.scopuseid_2-s2.0-85055214142-
dc.identifier.volume30-
dc.identifier.issue43-
dc.identifier.spagearticle no. 1801187-
dc.identifier.epagearticle no. 1801187-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000448786000004-
dc.identifier.issnl0935-9648-

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