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Article: Efficient and self-adaptive in-situ learning in multilayer memristor neural networks

TitleEfficient and self-adaptive in-situ learning in multilayer memristor neural networks
Authors
Issue Date2018
Citation
Nature Communications, 2018, v. 9, n. 1, article no. 2385 How to Cite?
Abstract© 2018 The Author(s). Memristors with tunable resistance states are emerging building blocks of artificial neural networks. However, in situ learning on a large-scale multiple-layer memristor network has yet to be demonstrated because of challenges in device property engineering and circuit integration. Here we monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer neural network. We experimentally demonstrate in situ learning capability and achieve competitive classification accuracy on a standard machine learning dataset, which further confirms that the training algorithm allows the network to adapt to hardware imperfections. Our simulation using the experimental parameters suggests that a larger network would further increase the classification accuracy. The memristor neural network is a promising hardware platform for artificial intelligence with high speed-energy efficiency.
Persistent Identifierhttp://hdl.handle.net/10722/286965
PubMed Central ID
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, Can-
dc.contributor.authorBelkin, Daniel-
dc.contributor.authorLi, Yunning-
dc.contributor.authorYan, Peng-
dc.contributor.authorHu, Miao-
dc.contributor.authorGe, Ning-
dc.contributor.authorJiang, Hao-
dc.contributor.authorMontgomery, Eric-
dc.contributor.authorLin, Peng-
dc.contributor.authorWang, Zhongrui-
dc.contributor.authorSong, Wenhao-
dc.contributor.authorStrachan, John Paul-
dc.contributor.authorBarnell, Mark-
dc.contributor.authorWu, Qing-
dc.contributor.authorWilliams, R. Stanley-
dc.contributor.authorYang, J. Joshua-
dc.contributor.authorXia, Qiangfei-
dc.date.accessioned2020-09-07T11:46:08Z-
dc.date.available2020-09-07T11:46:08Z-
dc.date.issued2018-
dc.identifier.citationNature Communications, 2018, v. 9, n. 1, article no. 2385-
dc.identifier.urihttp://hdl.handle.net/10722/286965-
dc.description.abstract© 2018 The Author(s). Memristors with tunable resistance states are emerging building blocks of artificial neural networks. However, in situ learning on a large-scale multiple-layer memristor network has yet to be demonstrated because of challenges in device property engineering and circuit integration. Here we monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer neural network. We experimentally demonstrate in situ learning capability and achieve competitive classification accuracy on a standard machine learning dataset, which further confirms that the training algorithm allows the network to adapt to hardware imperfections. Our simulation using the experimental parameters suggests that a larger network would further increase the classification accuracy. The memristor neural network is a promising hardware platform for artificial intelligence with high speed-energy efficiency.-
dc.languageeng-
dc.relation.ispartofNature Communications-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleEfficient and self-adaptive in-situ learning in multilayer memristor neural networks-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1038/s41467-018-04484-2-
dc.identifier.pmid29921923-
dc.identifier.pmcidPMC6008303-
dc.identifier.scopuseid_2-s2.0-85047487416-
dc.identifier.volume9-
dc.identifier.issue1-
dc.identifier.spagearticle no. 2385-
dc.identifier.epagearticle no. 2385-
dc.identifier.eissn2041-1723-
dc.identifier.isiWOS:000435538500003-
dc.identifier.issnl2041-1723-

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