Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1038/s41467-018-04484-2
- Scopus: eid_2-s2.0-85047487416
- PMID: 29921923
- WOS: WOS:000435538500003
Supplementary
- Citations:
- Appears in Collections:
Article: Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
Title | Efficient and self-adaptive in-situ learning in multilayer memristor neural networks |
---|---|
Authors | |
Issue Date | 2018 |
Citation | Nature Communications, 2018, v. 9, n. 1, article no. 2385 How to Cite? |
Abstract | © 2018 The Author(s). Memristors with tunable resistance states are emerging building blocks of artificial neural networks. However, in situ learning on a large-scale multiple-layer memristor network has yet to be demonstrated because of challenges in device property engineering and circuit integration. Here we monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer neural network. We experimentally demonstrate in situ learning capability and achieve competitive classification accuracy on a standard machine learning dataset, which further confirms that the training algorithm allows the network to adapt to hardware imperfections. Our simulation using the experimental parameters suggests that a larger network would further increase the classification accuracy. The memristor neural network is a promising hardware platform for artificial intelligence with high speed-energy efficiency. |
Persistent Identifier | http://hdl.handle.net/10722/286965 |
PubMed Central ID | |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, Can | - |
dc.contributor.author | Belkin, Daniel | - |
dc.contributor.author | Li, Yunning | - |
dc.contributor.author | Yan, Peng | - |
dc.contributor.author | Hu, Miao | - |
dc.contributor.author | Ge, Ning | - |
dc.contributor.author | Jiang, Hao | - |
dc.contributor.author | Montgomery, Eric | - |
dc.contributor.author | Lin, Peng | - |
dc.contributor.author | Wang, Zhongrui | - |
dc.contributor.author | Song, Wenhao | - |
dc.contributor.author | Strachan, John Paul | - |
dc.contributor.author | Barnell, Mark | - |
dc.contributor.author | Wu, Qing | - |
dc.contributor.author | Williams, R. Stanley | - |
dc.contributor.author | Yang, J. Joshua | - |
dc.contributor.author | Xia, Qiangfei | - |
dc.date.accessioned | 2020-09-07T11:46:08Z | - |
dc.date.available | 2020-09-07T11:46:08Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Nature Communications, 2018, v. 9, n. 1, article no. 2385 | - |
dc.identifier.uri | http://hdl.handle.net/10722/286965 | - |
dc.description.abstract | © 2018 The Author(s). Memristors with tunable resistance states are emerging building blocks of artificial neural networks. However, in situ learning on a large-scale multiple-layer memristor network has yet to be demonstrated because of challenges in device property engineering and circuit integration. Here we monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer neural network. We experimentally demonstrate in situ learning capability and achieve competitive classification accuracy on a standard machine learning dataset, which further confirms that the training algorithm allows the network to adapt to hardware imperfections. Our simulation using the experimental parameters suggests that a larger network would further increase the classification accuracy. The memristor neural network is a promising hardware platform for artificial intelligence with high speed-energy efficiency. | - |
dc.language | eng | - |
dc.relation.ispartof | Nature Communications | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.title | Efficient and self-adaptive in-situ learning in multilayer memristor neural networks | - |
dc.type | Article | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1038/s41467-018-04484-2 | - |
dc.identifier.pmid | 29921923 | - |
dc.identifier.pmcid | PMC6008303 | - |
dc.identifier.scopus | eid_2-s2.0-85047487416 | - |
dc.identifier.volume | 9 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | article no. 2385 | - |
dc.identifier.epage | article no. 2385 | - |
dc.identifier.eissn | 2041-1723 | - |
dc.identifier.isi | WOS:000435538500003 | - |
dc.identifier.issnl | 2041-1723 | - |