File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

TitleThreshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications
Authors
Wang, ZhongruiRao, MingyiMidya, RivuJoshi, SaumilJiang, HaoLin, PengSong, WenhaoAsapu, ShivaZhuo, YeLi, CanWu, HuaqiangXia, QiangfeiYang, J. Joshua
KeywordsDiffusive memristors
Electrochemical metallization
Neuromorphic computing
Resistive switching
Threshold switching
Issue Date2018
Citation
Advanced Functional Materials, 2018, v. 28, n. 6, article no. 1704862 How to Cite?
DOI: http://dx.doi.org/10.1002/adfm.201704862
Abstract© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Threshold switches with Ag or Cu active metal species are volatile memristors (also termed diffusive memristors) featuring spontaneous rupture of conduction channels. The temporal dynamics of the conductance evolution is closely related to the electrochemical and diffusive dynamics of the active metals which could be modulated by electric field strength, biasing duration, temperature, and so on. Microscopic pictures by electron microscopy and quantitative thermodynamics modeling are examined to give insights into the underlying physics of the switching. Depending on the time scale of the relaxation process, such devices find a variety of novel applications in electronics, ranging from selector devices for memories to synaptic devices for neuromorphic computing.
DescriptionAccepted manuscript is available on the publisher website.
Persistent Identifierhttp://hdl.handle.net/10722/286953
ISSN
1616-301X
2023 Impact Factor: 18.5
2023 SCImago Journal Rankings: 5.496
ISI Accession Number ID
WOS:000424152900009

 

DC FieldValueLanguage
dc.contributor.authorWang, Zhongrui-
dc.contributor.authorRao, Mingyi-
dc.contributor.authorMidya, Rivu-
dc.contributor.authorJoshi, Saumil-
dc.contributor.authorJiang, Hao-
dc.contributor.authorLin, Peng-
dc.contributor.authorSong, Wenhao-
dc.contributor.authorAsapu, Shiva-
dc.contributor.authorZhuo, Ye-
dc.contributor.authorLi, Can-
dc.contributor.authorWu, Huaqiang-
dc.contributor.authorXia, Qiangfei-
dc.contributor.authorYang, J. Joshua-
dc.date.accessioned2020-09-07T11:46:06Z-
dc.date.available2020-09-07T11:46:06Z-
dc.date.issued2018-
dc.identifier.citationAdvanced Functional Materials, 2018, v. 28, n. 6, article no. 1704862-
dc.identifier.issn1616-301X-
dc.identifier.urihttp://hdl.handle.net/10722/286953-
dc.descriptionAccepted manuscript is available on the publisher website.-
dc.description.abstract© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Threshold switches with Ag or Cu active metal species are volatile memristors (also termed diffusive memristors) featuring spontaneous rupture of conduction channels. The temporal dynamics of the conductance evolution is closely related to the electrochemical and diffusive dynamics of the active metals which could be modulated by electric field strength, biasing duration, temperature, and so on. Microscopic pictures by electron microscopy and quantitative thermodynamics modeling are examined to give insights into the underlying physics of the switching. Depending on the time scale of the relaxation process, such devices find a variety of novel applications in electronics, ranging from selector devices for memories to synaptic devices for neuromorphic computing.-
dc.languageeng-
dc.relation.ispartofAdvanced Functional Materials-
dc.subjectDiffusive memristors-
dc.subjectElectrochemical metallization-
dc.subjectNeuromorphic computing-
dc.subjectResistive switching-
dc.subjectThreshold switching-
dc.titleThreshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications-
dc.typeArticle-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1002/adfm.201704862-
dc.identifier.scopuseid_2-s2.0-85038079288-
dc.identifier.volume28-
dc.identifier.issue6-
dc.identifier.spagearticle no. 1704862-
dc.identifier.epagearticle no. 1704862-
dc.identifier.eissn1616-3028-
dc.identifier.isiWOS:000424152900009-
dc.identifier.issnl1616-301X-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats