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Article: Anatomy of Ag/Hafnia-Based Selectors with 1010 Nonlinearity

TitleAnatomy of Ag/Hafnia-Based Selectors with 10<sup>10</sup> Nonlinearity
Authors
Midya, RivuWang, ZhongruiZhang, JiamingSavel'ev, Sergey E.Li, CanRao, MingyiJang, Moon HyungJoshi, SaumilJiang, HaoLin, PengNorris, KateGe, NingWu, QingBarnell, MarkLi, ZhiyongXin, Huolin L.Williams, R. StanleyXia, QiangfeiYang, J. Joshua
KeywordsMemory
Memristor nonlinearity
Neuromorphic computing
Selector
Issue Date2017
Citation
Advanced Materials, 2017, v. 29, n. 12, article no. 1604457 How to Cite?
DOI: http://dx.doi.org/10.1002/adma.201604457
AbstractResearchers report a new symmetric bidirectional threshold switching selector device with features such as high selectivity of 1010, steep turn on slope, high endurance beyond 108 cycles, and fast ON/OFF switch speed within 75/250 ns. The selector has been experimentally stacked on top of a Pd/Ta2O5/TaOx/Pd memristor to form an integrated 1S1R cell. Microscopic analysis of a nanoscale device reveals discontinuous Ag nanostructures in a device after switching along with noticeable structural deformation and nanocrystalline m-HfO2. A numerical switching model based on the thermal diffusion aided by bipolar electrode effects and the Gibbs-Thomson effect, or minimization of interfacial energy has been developed to quantitatively interpret the observed switching difference between asymmetric Pd/HfOx/Ag and symmetric Pd/Ag/HfOx/Ag/Pd threshold devices.
DescriptionAccepted manuscript is available on the publisher website.
Persistent Identifierhttp://hdl.handle.net/10722/286937
ISSN
0935-9648
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID
WOS:000396998800004

 

DC FieldValueLanguage
dc.contributor.authorMidya, Rivu-
dc.contributor.authorWang, Zhongrui-
dc.contributor.authorZhang, Jiaming-
dc.contributor.authorSavel'ev, Sergey E.-
dc.contributor.authorLi, Can-
dc.contributor.authorRao, Mingyi-
dc.contributor.authorJang, Moon Hyung-
dc.contributor.authorJoshi, Saumil-
dc.contributor.authorJiang, Hao-
dc.contributor.authorLin, Peng-
dc.contributor.authorNorris, Kate-
dc.contributor.authorGe, Ning-
dc.contributor.authorWu, Qing-
dc.contributor.authorBarnell, Mark-
dc.contributor.authorLi, Zhiyong-
dc.contributor.authorXin, Huolin L.-
dc.contributor.authorWilliams, R. Stanley-
dc.contributor.authorXia, Qiangfei-
dc.contributor.authorYang, J. Joshua-
dc.date.accessioned2020-09-07T11:46:04Z-
dc.date.available2020-09-07T11:46:04Z-
dc.date.issued2017-
dc.identifier.citationAdvanced Materials, 2017, v. 29, n. 12, article no. 1604457-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/286937-
dc.descriptionAccepted manuscript is available on the publisher website.-
dc.description.abstractResearchers report a new symmetric bidirectional threshold switching selector device with features such as high selectivity of 1010, steep turn on slope, high endurance beyond 108 cycles, and fast ON/OFF switch speed within 75/250 ns. The selector has been experimentally stacked on top of a Pd/Ta2O5/TaOx/Pd memristor to form an integrated 1S1R cell. Microscopic analysis of a nanoscale device reveals discontinuous Ag nanostructures in a device after switching along with noticeable structural deformation and nanocrystalline m-HfO2. A numerical switching model based on the thermal diffusion aided by bipolar electrode effects and the Gibbs-Thomson effect, or minimization of interfacial energy has been developed to quantitatively interpret the observed switching difference between asymmetric Pd/HfOx/Ag and symmetric Pd/Ag/HfOx/Ag/Pd threshold devices.-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjectMemory-
dc.subjectMemristor nonlinearity-
dc.subjectNeuromorphic computing-
dc.subjectSelector-
dc.titleAnatomy of Ag/Hafnia-Based Selectors with 10<sup>10</sup> Nonlinearity-
dc.typeArticle-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1002/adma.201604457-
dc.identifier.pmid28134458-
dc.identifier.scopuseid_2-s2.0-85011076296-
dc.identifier.volume29-
dc.identifier.issue12-
dc.identifier.spagearticle no. 1604457-
dc.identifier.epagearticle no. 1604457-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000396998800004-
dc.identifier.issnl0935-9648-

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