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- Publisher Website: 10.1038/nmat4756
- Scopus: eid_2-s2.0-84988729312
- PMID: 27669052
- WOS: WOS:000391343300019
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Article: Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Title | Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing |
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Authors | |
Issue Date | 2017 |
Citation | Nature Materials, 2017, v. 16, n. 1, p. 101-108 How to Cite? |
Abstract | © 2016 Macmillan Publishers Limited part of Springer. All rights reserved. The accumulation and extrusion of Ca2+ in the pre- and postsynaptic compartments play a critical role in initiating plastic changes in biological synapses. To emulate this fundamental process in electronic devices, we developed diffusive Ag-in-oxide memristors with a temporal response during and after stimulation similar to that of the synaptic Ca2+ dynamics. In situ high-resolution transmission electron microscopy and nanoparticle dynamics simulations both demonstrate that Ag atoms disperse under electrical bias and regroup spontaneously under zero bias because of interfacial energy minimization, closely resembling synaptic influx and extrusion of Ca2+, respectively. The diffusive memristor and its dynamics enable a direct emulation of both short- and long-term plasticity of biological synapses, representing an advance in hardware implementation of neuromorphic functionalities. |
Persistent Identifier | http://hdl.handle.net/10722/286932 |
ISSN | 2023 Impact Factor: 37.2 2023 SCImago Journal Rankings: 14.231 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Wang, Zhongrui | - |
dc.contributor.author | Joshi, Saumil | - |
dc.contributor.author | Savel'ev, Sergey E. | - |
dc.contributor.author | Jiang, Hao | - |
dc.contributor.author | Midya, Rivu | - |
dc.contributor.author | Lin, Peng | - |
dc.contributor.author | Hu, Miao | - |
dc.contributor.author | Ge, Ning | - |
dc.contributor.author | Strachan, John Paul | - |
dc.contributor.author | Li, Zhiyong | - |
dc.contributor.author | Wu, Qing | - |
dc.contributor.author | Barnell, Mark | - |
dc.contributor.author | Li, Geng Lin | - |
dc.contributor.author | Xin, Huolin L. | - |
dc.contributor.author | Williams, R. Stanley | - |
dc.contributor.author | Xia, Qiangfei | - |
dc.contributor.author | Yang, J. Joshua | - |
dc.date.accessioned | 2020-09-07T11:46:03Z | - |
dc.date.available | 2020-09-07T11:46:03Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | Nature Materials, 2017, v. 16, n. 1, p. 101-108 | - |
dc.identifier.issn | 1476-1122 | - |
dc.identifier.uri | http://hdl.handle.net/10722/286932 | - |
dc.description.abstract | © 2016 Macmillan Publishers Limited part of Springer. All rights reserved. The accumulation and extrusion of Ca2+ in the pre- and postsynaptic compartments play a critical role in initiating plastic changes in biological synapses. To emulate this fundamental process in electronic devices, we developed diffusive Ag-in-oxide memristors with a temporal response during and after stimulation similar to that of the synaptic Ca2+ dynamics. In situ high-resolution transmission electron microscopy and nanoparticle dynamics simulations both demonstrate that Ag atoms disperse under electrical bias and regroup spontaneously under zero bias because of interfacial energy minimization, closely resembling synaptic influx and extrusion of Ca2+, respectively. The diffusive memristor and its dynamics enable a direct emulation of both short- and long-term plasticity of biological synapses, representing an advance in hardware implementation of neuromorphic functionalities. | - |
dc.language | eng | - |
dc.relation.ispartof | Nature Materials | - |
dc.title | Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1038/nmat4756 | - |
dc.identifier.pmid | 27669052 | - |
dc.identifier.scopus | eid_2-s2.0-84988729312 | - |
dc.identifier.volume | 16 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 101 | - |
dc.identifier.epage | 108 | - |
dc.identifier.eissn | 1476-4660 | - |
dc.identifier.isi | WOS:000391343300019 | - |
dc.identifier.issnl | 1476-1122 | - |