File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1063/1.4817970
- Scopus: eid_2-s2.0-84881638223
- WOS: WOS:000322908300038
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Low voltage resistive switching devices based on chemically produced silicon oxide
Title | Low voltage resistive switching devices based on chemically produced silicon oxide |
---|---|
Authors | |
Issue Date | 2013 |
Citation | Applied Physics Letters, 2013, v. 103, n. 6, article no. 062104 How to Cite? |
Abstract | We developed nonvolatile metal/SiOx/Si memristive devices based on ultrathin (∼1 nm) silicon oxide that was produced in a Piranha solution. The devices exhibited repeatable resistive switching behavior with low programming voltages (as low as 0.5 V) and high ON/OFF conductance ratio. Devices with active metals as top electrodes were bipolar switches, while those with inert metal electrodes were unipolar. We also studied the switching mechanisms for both types of devices based on the filament formation and rupture, and proposed conduction models for Pt/SiOx/Si devices. © 2013 AIP Publishing LLC. |
Persistent Identifier | http://hdl.handle.net/10722/286882 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, Can | - |
dc.contributor.author | Jiang, Hao | - |
dc.contributor.author | Xia, Qiangfei | - |
dc.date.accessioned | 2020-09-07T11:45:55Z | - |
dc.date.available | 2020-09-07T11:45:55Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | Applied Physics Letters, 2013, v. 103, n. 6, article no. 062104 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/286882 | - |
dc.description.abstract | We developed nonvolatile metal/SiOx/Si memristive devices based on ultrathin (∼1 nm) silicon oxide that was produced in a Piranha solution. The devices exhibited repeatable resistive switching behavior with low programming voltages (as low as 0.5 V) and high ON/OFF conductance ratio. Devices with active metals as top electrodes were bipolar switches, while those with inert metal electrodes were unipolar. We also studied the switching mechanisms for both types of devices based on the filament formation and rupture, and proposed conduction models for Pt/SiOx/Si devices. © 2013 AIP Publishing LLC. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Low voltage resistive switching devices based on chemically produced silicon oxide | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.4817970 | - |
dc.identifier.scopus | eid_2-s2.0-84881638223 | - |
dc.identifier.volume | 103 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | article no. 062104 | - |
dc.identifier.epage | article no. 062104 | - |
dc.identifier.isi | WOS:000322908300038 | - |
dc.identifier.issnl | 0003-6951 | - |