File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping

TitleHighly uniform, self-compliance, and forming-free ALD HfO<inf>2</inf>-based RRAM with Ge doping
Authors
Wang, ZhongruiZhu, W. G.Du, A. Y.Wu, L.Fang, Z.Tran, X. A.Liu, W. J.Zhang, K. L.Yu, H. Y.
Keywordsresistive switching
Atomic layer deposition (ALD)
resistive-switching random access memory (RRAM)
HfO 2
Issue Date2012
Citation
IEEE Transactions on Electron Devices, 2012, v. 59, n. 4, p. 1203-1208 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2012.2182770
AbstractAtomic layer deposited (ALD) HfO 2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The forming-free behavior originates from the oxygen deficiency due to the metal doping layer. High uniformity, by first-principle calculation, is caused by Ge doping in the HfO 2, which lowers the oxygen-vacancy formation energy. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/286872
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:000302083800045

 

DC FieldValueLanguage
dc.contributor.authorWang, Zhongrui-
dc.contributor.authorZhu, W. G.-
dc.contributor.authorDu, A. Y.-
dc.contributor.authorWu, L.-
dc.contributor.authorFang, Z.-
dc.contributor.authorTran, X. A.-
dc.contributor.authorLiu, W. J.-
dc.contributor.authorZhang, K. L.-
dc.contributor.authorYu, H. Y.-
dc.date.accessioned2020-09-07T11:45:53Z-
dc.date.available2020-09-07T11:45:53Z-
dc.date.issued2012-
dc.identifier.citationIEEE Transactions on Electron Devices, 2012, v. 59, n. 4, p. 1203-1208-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/286872-
dc.description.abstractAtomic layer deposited (ALD) HfO 2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The forming-free behavior originates from the oxygen deficiency due to the metal doping layer. High uniformity, by first-principle calculation, is caused by Ge doping in the HfO 2, which lowers the oxygen-vacancy formation energy. © 2006 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectresistive switching-
dc.subjectAtomic layer deposition (ALD)-
dc.subjectresistive-switching random access memory (RRAM)-
dc.subjectHfO 2-
dc.titleHighly uniform, self-compliance, and forming-free ALD HfO<inf>2</inf>-based RRAM with Ge doping-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2012.2182770-
dc.identifier.scopuseid_2-s2.0-84862830830-
dc.identifier.volume59-
dc.identifier.issue4-
dc.identifier.spage1203-
dc.identifier.epage1208-
dc.identifier.isiWOS:000302083800045-
dc.identifier.issnl0018-9383-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats