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- Publisher Website: 10.1109/LED.2010.2099205
- Scopus: eid_2-s2.0-79951951303
- WOS: WOS:000287658400058
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Article: A high-yield HfOx -based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration
| Title | A high-yield HfO<inf>x</inf>-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration |
|---|---|
| Authors | |
| Keywords | unipolar resistive switching (RS) HfO x resistive random access memory (RRAM) |
| Issue Date | 2011 |
| Citation | IEEE Electron Device Letters, 2011, v. 32, n. 3, p. 396-398 How to Cite? |
| Abstract | In this letter, a resistive random access memory based on Ni electrodeHfOx dielectricn+ Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high on/off resistance ratio 10-3, good retention characteristics 10-5s at 150°C), satisfactory pulse switching endurance (10-5), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer. © 2006 IEEE. |
| Persistent Identifier | http://hdl.handle.net/10722/286854 |
| ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Tran, X. A. | - |
| dc.contributor.author | Yu, H. Y. | - |
| dc.contributor.author | Yeo, Y. C. | - |
| dc.contributor.author | Wu, L. | - |
| dc.contributor.author | Liu, W. J. | - |
| dc.contributor.author | Wang, Z. R. | - |
| dc.contributor.author | Fang, Z. | - |
| dc.contributor.author | Pey, K. L. | - |
| dc.contributor.author | Sun, X. W. | - |
| dc.contributor.author | Du, A. Y. | - |
| dc.contributor.author | Nguyen, B. Y. | - |
| dc.contributor.author | Li, M. F. | - |
| dc.date.accessioned | 2020-09-07T11:45:51Z | - |
| dc.date.available | 2020-09-07T11:45:51Z | - |
| dc.date.issued | 2011 | - |
| dc.identifier.citation | IEEE Electron Device Letters, 2011, v. 32, n. 3, p. 396-398 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/286854 | - |
| dc.description.abstract | In this letter, a resistive random access memory based on Ni electrodeHfOx dielectricn+ Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high on/off resistance ratio 10-3, good retention characteristics 10-5s at 150°C), satisfactory pulse switching endurance (10-5), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer. © 2006 IEEE. | - |
| dc.language | eng | - |
| dc.relation.ispartof | IEEE Electron Device Letters | - |
| dc.subject | unipolar resistive switching (RS) | - |
| dc.subject | HfO x | - |
| dc.subject | resistive random access memory (RRAM) | - |
| dc.title | A high-yield HfO<inf>x</inf>-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration | - |
| dc.type | Article | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1109/LED.2010.2099205 | - |
| dc.identifier.scopus | eid_2-s2.0-79951951303 | - |
| dc.identifier.volume | 32 | - |
| dc.identifier.issue | 3 | - |
| dc.identifier.spage | 396 | - |
| dc.identifier.epage | 398 | - |
| dc.identifier.isi | WOS:000287658400058 | - |
| dc.identifier.issnl | 0741-3106 | - |