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Article: Temperature instability of resistive switching on HfOx-based RRAM devices

TitleTemperature instability of resistive switching on HfO<inf>x</inf>-based RRAM devices
Authors
Fang, Z.Yu, H. Y.Liu, W. J.Wang, Z. R.Tran, X. A.Gao, B.Kang, J. F.
KeywordsTemperature instability
Resistive switching
Resistive random access memory (RRAM)
Issue Date2010
Citation
IEEE Electron Device Letters, 2010, v. 31, n. 5, p. 476-478 How to Cite?
DOI: http://dx.doi.org/10.1109/LED.2010.2041893
AbstractIn this letter, the temperature instability of HfOx-based resistive switching memory is investigated. It is observed that with the increase of high temperature (up to 100 °C in this work), the leakage current of high-resistance state would increase, and the set/reset voltages would decrease. In addition, multibit switching exhibited at room temperature might not be retained with the increase of temperature. All these phenomena can be correlated with oxygen-vacancy-related trap formation and annihilation. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/286852
ISSN
0741-3106
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID
WOS:000277047300032

 

DC FieldValueLanguage
dc.contributor.authorFang, Z.-
dc.contributor.authorYu, H. Y.-
dc.contributor.authorLiu, W. J.-
dc.contributor.authorWang, Z. R.-
dc.contributor.authorTran, X. A.-
dc.contributor.authorGao, B.-
dc.contributor.authorKang, J. F.-
dc.date.accessioned2020-09-07T11:45:50Z-
dc.date.available2020-09-07T11:45:50Z-
dc.date.issued2010-
dc.identifier.citationIEEE Electron Device Letters, 2010, v. 31, n. 5, p. 476-478-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/286852-
dc.description.abstractIn this letter, the temperature instability of HfOx-based resistive switching memory is investigated. It is observed that with the increase of high temperature (up to 100 °C in this work), the leakage current of high-resistance state would increase, and the set/reset voltages would decrease. In addition, multibit switching exhibited at room temperature might not be retained with the increase of temperature. All these phenomena can be correlated with oxygen-vacancy-related trap formation and annihilation. © 2010 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectTemperature instability-
dc.subjectResistive switching-
dc.subjectResistive random access memory (RRAM)-
dc.titleTemperature instability of resistive switching on HfO<inf>x</inf>-based RRAM devices-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2010.2041893-
dc.identifier.scopuseid_2-s2.0-77951797129-
dc.identifier.volume31-
dc.identifier.issue5-
dc.identifier.spage476-
dc.identifier.epage478-
dc.identifier.isiWOS:000277047300032-
dc.identifier.issnl0741-3106-

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