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Article: Electronic trap characterization of the Sc2O3La 2O3 high- κ gate stack by scanning tunneling microscopy

TitleElectronic trap characterization of the Sc<inf>2</inf>O<inf>3</inf>La <inf>2</inf>O<inf>3</inf> high- κ gate stack by scanning tunneling microscopy
Authors
Issue Date2008
Citation
Applied Physics Letters, 2008, v. 92, n. 2, article no. 022904 How to Cite?
AbstractThe tunneling current versus voltage characteristic of the Sc2 O3 La2 O3 Si Ox high- κ gate stack is examined using scanning tunneling microscopy in ultrahigh vacuum. Different measurement bias polarities allow information on the location (i.e., in the high- κ or interfacial Si Ox layer) of the electronic traps to be extracted. Two types of localized leakage sites may be distinguished. Lowering of the electron barrier height and trap-assisted tunneling are proposed as the two leakage mechanisms. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/286838
ISSN
2020 Impact Factor: 3.791
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorOng, Y. C.-
dc.contributor.authorAng, D. S.-
dc.contributor.authorPey, K. L.-
dc.contributor.authorWang, Z. R.-
dc.contributor.authorO'Shea, S. J.-
dc.contributor.authorTung, C. H.-
dc.contributor.authorKawanago, T.-
dc.contributor.authorKakushima, K.-
dc.contributor.authorIwai, H.-
dc.date.accessioned2020-09-07T11:45:48Z-
dc.date.available2020-09-07T11:45:48Z-
dc.date.issued2008-
dc.identifier.citationApplied Physics Letters, 2008, v. 92, n. 2, article no. 022904-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/286838-
dc.description.abstractThe tunneling current versus voltage characteristic of the Sc2 O3 La2 O3 Si Ox high- κ gate stack is examined using scanning tunneling microscopy in ultrahigh vacuum. Different measurement bias polarities allow information on the location (i.e., in the high- κ or interfacial Si Ox layer) of the electronic traps to be extracted. Two types of localized leakage sites may be distinguished. Lowering of the electron barrier height and trap-assisted tunneling are proposed as the two leakage mechanisms. © 2008 American Institute of Physics.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleElectronic trap characterization of the Sc<inf>2</inf>O<inf>3</inf>La <inf>2</inf>O<inf>3</inf> high- κ gate stack by scanning tunneling microscopy-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2831907-
dc.identifier.scopuseid_2-s2.0-38349172961-
dc.identifier.volume92-
dc.identifier.issue2-
dc.identifier.spagearticle no. 022904-
dc.identifier.epagearticle no. 022904-
dc.identifier.isiWOS:000252470900072-
dc.identifier.issnl0003-6951-

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