File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Valley phonons and exciton complexes in a monolayer semiconductor

TitleValley phonons and exciton complexes in a monolayer semiconductor
Authors
Keywordsatomic force microscopy
atomic particle
confocal microscopy
crystal structure
electric conductivity
Issue Date2020
PublisherNature Research (part of Springer Nature): Fully open access journals. The Journal's web site is located at http://www.nature.com/ncomms/index.html
Citation
Nature Communications, 2020, v. 11 n. 1, p. 618:1-618:7 How to Cite?
AbstractThe coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects. Here, we report the observation of multiple valley phonons – phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone – and the resulting exciton complexes in the monolayer semiconductor WSe2. We find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncover an intervalley exciton near charge neutrality. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe2 is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons.
Persistent Identifierhttp://hdl.handle.net/10722/286301
ISSN
2023 Impact Factor: 14.7
2023 SCImago Journal Rankings: 4.887
PubMed Central ID
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHe, M-
dc.contributor.authorRivera, P-
dc.contributor.authorVan Tuan, D-
dc.contributor.authorWilson, NP-
dc.contributor.authorYang, M-
dc.contributor.authorTaniguchi, T-
dc.contributor.authorWatanabe, K-
dc.contributor.authorYan, J-
dc.contributor.authorMandrus, DG-
dc.contributor.authorYu, H-
dc.contributor.authorDery, H-
dc.contributor.authorYao, W-
dc.contributor.authorXu, X-
dc.date.accessioned2020-08-31T07:01:58Z-
dc.date.available2020-08-31T07:01:58Z-
dc.date.issued2020-
dc.identifier.citationNature Communications, 2020, v. 11 n. 1, p. 618:1-618:7-
dc.identifier.issn2041-1723-
dc.identifier.urihttp://hdl.handle.net/10722/286301-
dc.description.abstractThe coupling between spin, charge, and lattice degrees of freedom plays an important role in a wide range of fundamental phenomena. Monolayer semiconducting transitional metal dichalcogenides have emerged as an outstanding platform for studying these coupling effects. Here, we report the observation of multiple valley phonons – phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone – and the resulting exciton complexes in the monolayer semiconductor WSe2. We find that these valley phonons lead to efficient intervalley scattering of quasi particles in both exciton formation and relaxation. This leads to a series of photoluminescence peaks as valley phonon replicas of dark trions. Using identified valley phonons, we also uncover an intervalley exciton near charge neutrality. Our work not only identifies a number of previously unknown 2D excitonic species, but also shows that monolayer WSe2 is a prime candidate for studying interactions between spin, pseudospin, and zone-edge phonons.-
dc.languageeng-
dc.publisherNature Research (part of Springer Nature): Fully open access journals. The Journal's web site is located at http://www.nature.com/ncomms/index.html-
dc.relation.ispartofNature Communications-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectatomic force microscopy-
dc.subjectatomic particle-
dc.subjectconfocal microscopy-
dc.subjectcrystal structure-
dc.subjectelectric conductivity-
dc.titleValley phonons and exciton complexes in a monolayer semiconductor-
dc.typeArticle-
dc.identifier.emailYao, W: wangyao@hku.hk-
dc.identifier.authorityYu, H=rp02112-
dc.identifier.authorityYao, W=rp00827-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1038/s41467-020-14472-0-
dc.identifier.pmid32001715-
dc.identifier.pmcidPMC6992782-
dc.identifier.scopuseid_2-s2.0-85078710618-
dc.identifier.hkuros313348-
dc.identifier.volume11-
dc.identifier.issue1-
dc.identifier.spage618:1-
dc.identifier.epage618:7-
dc.identifier.isiWOS:000543986200001-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl2041-1723-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats