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Article: Excitons in strain-induced one-dimensional moiré potentials at transition metal dichalcogenide heterojunctions

TitleExcitons in strain-induced one-dimensional moiré potentials at transition metal dichalcogenide heterojunctions
Authors
KeywordsExcitons
Heterojunctions
Photoluminescence
Polarization
Semiconductor quantum dots
Issue Date2020
PublisherNature Publishing Group. The Journal's web site is located at http://www.nature.com/nmat/
Citation
Nature Materials, 2020, Epub 2020-07-13, p. 1-7 How to Cite?
AbstractThe possibility of confining interlayer excitons in interfacial moiré patterns has recently gained attention as a strategy to form ordered arrays of zero-dimensional quantum emitters and topological superlattices in transition metal dichalcogenide heterostructures. Strain is expected to play an important role in the modulation of the moiré potential landscape, tuning the array of quantum dot-like zero-dimensional traps into parallel stripes of one-dimensional quantum wires. Here, we present real-space imaging of unstrained zero-dimensional and strain-induced one-dimensional moiré patterns along with photoluminescence measurements of the corresponding excitonic emission from WSe2/MoSe2 heterobilayers. Whereas excitons in zero-dimensional moiré traps display quantum emitter-like sharp photoluminescence peaks with circular polarization, the photoluminescence emission from excitons in one-dimensional moiré potentials shows linear polarization and two orders of magnitude higher intensity. These results establish strain engineering as an effective method to tailor moiré potentials and their optoelectronic response on demand.
Persistent Identifierhttp://hdl.handle.net/10722/285485
ISSN
2020 Impact Factor: 43.841
2015 SCImago Journal Rankings: 21.395
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorBai, Y-
dc.contributor.authorZhou, L-
dc.contributor.authorWang, J-
dc.contributor.authorWu, W-
dc.contributor.authorMcGilly, LJ-
dc.contributor.authorHalbertal, D-
dc.contributor.authorLo, CFB-
dc.contributor.authorLiu, F-
dc.contributor.authorArdelean, J-
dc.contributor.authorRivera, P-
dc.contributor.authorFinney, NR-
dc.contributor.authorYANG, XC-
dc.contributor.authorBasov, DN-
dc.contributor.authorYao, W-
dc.contributor.authorXu, X-
dc.contributor.authorHone, J-
dc.contributor.authorPasupathy, AN-
dc.contributor.authorZhu, XY-
dc.date.accessioned2020-08-18T03:53:52Z-
dc.date.available2020-08-18T03:53:52Z-
dc.date.issued2020-
dc.identifier.citationNature Materials, 2020, Epub 2020-07-13, p. 1-7-
dc.identifier.issn1476-1122-
dc.identifier.urihttp://hdl.handle.net/10722/285485-
dc.description.abstractThe possibility of confining interlayer excitons in interfacial moiré patterns has recently gained attention as a strategy to form ordered arrays of zero-dimensional quantum emitters and topological superlattices in transition metal dichalcogenide heterostructures. Strain is expected to play an important role in the modulation of the moiré potential landscape, tuning the array of quantum dot-like zero-dimensional traps into parallel stripes of one-dimensional quantum wires. Here, we present real-space imaging of unstrained zero-dimensional and strain-induced one-dimensional moiré patterns along with photoluminescence measurements of the corresponding excitonic emission from WSe2/MoSe2 heterobilayers. Whereas excitons in zero-dimensional moiré traps display quantum emitter-like sharp photoluminescence peaks with circular polarization, the photoluminescence emission from excitons in one-dimensional moiré potentials shows linear polarization and two orders of magnitude higher intensity. These results establish strain engineering as an effective method to tailor moiré potentials and their optoelectronic response on demand.-
dc.languageeng-
dc.publisherNature Publishing Group. The Journal's web site is located at http://www.nature.com/nmat/-
dc.relation.ispartofNature Materials-
dc.rightsThis is a post-peer-review, pre-copyedit version of an article published in [insert journal title]. The final authenticated version is available online at: https://doi.org/[insert DOI]-
dc.subjectExcitons-
dc.subjectHeterojunctions-
dc.subjectPhotoluminescence-
dc.subjectPolarization-
dc.subjectSemiconductor quantum dots-
dc.titleExcitons in strain-induced one-dimensional moiré potentials at transition metal dichalcogenide heterojunctions-
dc.typeArticle-
dc.identifier.emailYao, W: wangyao@hku.hk-
dc.identifier.authorityYao, W=rp00827-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1038/s41563-020-0730-8-
dc.identifier.scopuseid_2-s2.0-85087838655-
dc.identifier.hkuros312807-
dc.identifier.volumeEpub 2020-07-13-
dc.identifier.spage1-
dc.identifier.epage7-
dc.identifier.isiWOS:000548166000009-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl1476-1122-

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