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Article: Understanding the effects of iodine doping on the thermoelectric performance of n-type PbTe ingot materials
Title | Understanding the effects of iodine doping on the thermoelectric performance of n-type PbTe ingot materials |
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Authors | |
Keywords | Crystal lattices Ingots IodineIV-VI semiconductors Layered semiconductors Lead alloys |
Issue Date | 2019 |
Publisher | AIP Publishing LLC. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2019, v. 126 n. 2, p. article no. 025108 How to Cite? |
Abstract | The superior performance of p-type PbTe has generated excitement toward discovering an n-type PbTe recipe to meet the manufacturing requirements for thermoelectric devices. PbI2 is a well-known dopant for n-type PbTe alloys fabrication. For the halogen family, the sintering process involves a common densifying strategy used to reduce the lattice thermal conductivity, which unfortunately causes strong deviations from nominal composition. Thus, to precisely determine the effects of iodine on PbTe’s electrical properties, PbI2-doped ingots were fabricated and characterized in this work. We found that the ingot samples exhibited high electrical conductivity, high power factors, and low lattice thermal conductivity when x equaled 0.004 and 0.005, especially at low temperatures, which was comparable with previous reports. |
Persistent Identifier | http://hdl.handle.net/10722/283413 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | CUI, J | - |
dc.contributor.author | Wang, M | - |
dc.contributor.author | Xu, X | - |
dc.contributor.author | Chen, Y | - |
dc.contributor.author | He, J | - |
dc.date.accessioned | 2020-06-22T02:56:05Z | - |
dc.date.available | 2020-06-22T02:56:05Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Journal of Applied Physics, 2019, v. 126 n. 2, p. article no. 025108 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10722/283413 | - |
dc.description.abstract | The superior performance of p-type PbTe has generated excitement toward discovering an n-type PbTe recipe to meet the manufacturing requirements for thermoelectric devices. PbI2 is a well-known dopant for n-type PbTe alloys fabrication. For the halogen family, the sintering process involves a common densifying strategy used to reduce the lattice thermal conductivity, which unfortunately causes strong deviations from nominal composition. Thus, to precisely determine the effects of iodine on PbTe’s electrical properties, PbI2-doped ingots were fabricated and characterized in this work. We found that the ingot samples exhibited high electrical conductivity, high power factors, and low lattice thermal conductivity when x equaled 0.004 and 0.005, especially at low temperatures, which was comparable with previous reports. | - |
dc.language | eng | - |
dc.publisher | AIP Publishing LLC. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | - |
dc.relation.ispartof | Journal of Applied Physics | - |
dc.rights | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Journal of Applied Physics, 2019, v. 126 n. 2, article no. 025108] and may be found at [http://dx.doi.org/10.1063/1.5101034]. | - |
dc.subject | Crystal lattices | - |
dc.subject | Ingots | - |
dc.subject | IodineIV-VI semiconductors | - |
dc.subject | Layered semiconductors | - |
dc.subject | Lead alloys | - |
dc.title | Understanding the effects of iodine doping on the thermoelectric performance of n-type PbTe ingot materials | - |
dc.type | Article | - |
dc.identifier.email | Chen, Y: yuechen@hku.hk | - |
dc.identifier.authority | Chen, Y=rp01925 | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.5101034 | - |
dc.identifier.scopus | eid_2-s2.0-85069047130 | - |
dc.identifier.hkuros | 310528 | - |
dc.identifier.volume | 126 | - |
dc.identifier.issue | 2 | - |
dc.identifier.spage | article no. 025108 | - |
dc.identifier.epage | article no. 025108 | - |
dc.identifier.isi | WOS:000487020900022 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 0021-8979 | - |