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Article: Strain and doping in two-dimensional SnTe nanosheets: implications for thermoelectric conversion

TitleStrain and doping in two-dimensional SnTe nanosheets: implications for thermoelectric conversion
Authors
Keywordsthermoelectric conversion
2D SnTe
nanosheets
strain
doping
Issue Date2019
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/acsnanomaterials
Citation
ACS Applied Nano Materials, 2019, v. 3 n. 1, p. 114-119 How to Cite?
AbstractAmong thermoelectric materials, tin telluride has been attracting significant interest for its nontoxic and eco-friendly nature. Meanwhile, band engineering and ultrathin film technologies have been reported to be promising in improving the performance of thermoelectric materials. In this work, we explore the potential of two-dimensional (2D) SnTe’s thermoelectric performance, following the recent successful synthesis of 2D SnTe. It is found that pristine 2D SnTe is more likely to be a p-type semiconductor due to the existence of Sn vacancies. The electrical transport properties of 2D SnTe when it is (i) under compressive stress and (ii) doped with either nitrogen group or halogen group elements (including As, Sb, Bi, Br, and I) have been studied from first-principles electronic structure calculations. Boltzmann transport study illustrates that equibiaxial compressive stress may enhance the electrical transport properties of 2D SnTe. Moreover, our calculations suggest that iodine and arsenic can be effective n-type and p-type dopants, respectively.
Persistent Identifierhttp://hdl.handle.net/10722/283412
ISSN
2020 Impact Factor: 5.097
2020 SCImago Journal Rankings: 1.227
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorXIONG, F-
dc.contributor.authorTan, HB-
dc.contributor.authorXIA, C-
dc.contributor.authorChen, Y-
dc.date.accessioned2020-06-22T02:56:05Z-
dc.date.available2020-06-22T02:56:05Z-
dc.date.issued2019-
dc.identifier.citationACS Applied Nano Materials, 2019, v. 3 n. 1, p. 114-119-
dc.identifier.issn2574-0970-
dc.identifier.urihttp://hdl.handle.net/10722/283412-
dc.description.abstractAmong thermoelectric materials, tin telluride has been attracting significant interest for its nontoxic and eco-friendly nature. Meanwhile, band engineering and ultrathin film technologies have been reported to be promising in improving the performance of thermoelectric materials. In this work, we explore the potential of two-dimensional (2D) SnTe’s thermoelectric performance, following the recent successful synthesis of 2D SnTe. It is found that pristine 2D SnTe is more likely to be a p-type semiconductor due to the existence of Sn vacancies. The electrical transport properties of 2D SnTe when it is (i) under compressive stress and (ii) doped with either nitrogen group or halogen group elements (including As, Sb, Bi, Br, and I) have been studied from first-principles electronic structure calculations. Boltzmann transport study illustrates that equibiaxial compressive stress may enhance the electrical transport properties of 2D SnTe. Moreover, our calculations suggest that iodine and arsenic can be effective n-type and p-type dopants, respectively.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/acsnanomaterials-
dc.relation.ispartofACS Applied Nano Materials-
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].-
dc.subjectthermoelectric conversion-
dc.subject2D SnTe-
dc.subjectnanosheets-
dc.subjectstrain-
dc.subjectdoping-
dc.titleStrain and doping in two-dimensional SnTe nanosheets: implications for thermoelectric conversion-
dc.typeArticle-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsanm.9b01793-
dc.identifier.scopuseid_2-s2.0-85078717050-
dc.identifier.hkuros310517-
dc.identifier.volume3-
dc.identifier.issue1-
dc.identifier.spage114-
dc.identifier.epage119-
dc.identifier.isiWOS:000510073600012-
dc.publisher.placeUnited States-
dc.identifier.issnl2574-0970-

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