File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Dilute Cu2Te-alloying enables extraordinary performance of r-GeTe thermoelectrics

TitleDilute Cu2Te-alloying enables extraordinary performance of r-GeTe thermoelectrics
Authors
KeywordsThermoelectrics
Effective dopant
High carrier mobility
Rhombohedral GeTe
Issue Date2019
PublisherElsevier Ltd. The Journal's web site is located at http://www.journals.elsevier.com/materials-today-physics
Citation
Materials Today Physics, 2019, v. 9, p. article no. 100096 How to Cite?
AbstractThermoelectric GeTe intrinsically comes with a p-type conduction and a carrier concentration (∼1021 cm−3) significantly higher than needed (∼1020 cm−3) because of the existence of high-concentration cation vacancies (∼3%). Its rhombohedral phase (r-GeTe) has recently been found to be very interesting because of the overall high valence band degeneracy enabled by the rhombohedral distortion from its cubic structure. Existing efforts on advancing GeTe thermoelectrics usually involve a very high concentration of impurities, which usually leads to a significant simultaneous change in the band structure and scattering of both electrons and phonons. In this study, we focus on r-GeTe and illustrate Cu2Te as a particularly effective dopant, enabling carrier concentration to be optimized at a very low overall impurity concentration for minimizing the changes in the band structure and scattering. This work reveals an inherently high mobility (∼140 cm2/V-s) that has never been realized in the literature (≤90 cm2/V-s) and demonstrates the degree of rhombohedral distortion as a core descriptor for the valence band structure. A further PbTe-alloying for a reduction in lattice thermal conductivity successfully realizes an extraordinary thermoelectric performance, demonstrating the superior thermoelectric potential inherent to r-GeTe.
Persistent Identifierhttp://hdl.handle.net/10722/283388
ISSN
2019 Impact Factor: 10.443

 

DC FieldValueLanguage
dc.contributor.authorBu, Z-
dc.contributor.authorLi, W-
dc.contributor.authorLi, J-
dc.contributor.authorZhang, X-
dc.contributor.authorMAO, J-
dc.contributor.authorChen, Y-
dc.contributor.authorPei, Y-
dc.date.accessioned2020-06-22T02:55:48Z-
dc.date.available2020-06-22T02:55:48Z-
dc.date.issued2019-
dc.identifier.citationMaterials Today Physics, 2019, v. 9, p. article no. 100096-
dc.identifier.issn2542-5293-
dc.identifier.urihttp://hdl.handle.net/10722/283388-
dc.description.abstractThermoelectric GeTe intrinsically comes with a p-type conduction and a carrier concentration (∼1021 cm−3) significantly higher than needed (∼1020 cm−3) because of the existence of high-concentration cation vacancies (∼3%). Its rhombohedral phase (r-GeTe) has recently been found to be very interesting because of the overall high valence band degeneracy enabled by the rhombohedral distortion from its cubic structure. Existing efforts on advancing GeTe thermoelectrics usually involve a very high concentration of impurities, which usually leads to a significant simultaneous change in the band structure and scattering of both electrons and phonons. In this study, we focus on r-GeTe and illustrate Cu2Te as a particularly effective dopant, enabling carrier concentration to be optimized at a very low overall impurity concentration for minimizing the changes in the band structure and scattering. This work reveals an inherently high mobility (∼140 cm2/V-s) that has never been realized in the literature (≤90 cm2/V-s) and demonstrates the degree of rhombohedral distortion as a core descriptor for the valence band structure. A further PbTe-alloying for a reduction in lattice thermal conductivity successfully realizes an extraordinary thermoelectric performance, demonstrating the superior thermoelectric potential inherent to r-GeTe.-
dc.languageeng-
dc.publisherElsevier Ltd. The Journal's web site is located at http://www.journals.elsevier.com/materials-today-physics-
dc.relation.ispartofMaterials Today Physics-
dc.subjectThermoelectrics-
dc.subjectEffective dopant-
dc.subjectHigh carrier mobility-
dc.subjectRhombohedral GeTe-
dc.titleDilute Cu2Te-alloying enables extraordinary performance of r-GeTe thermoelectrics-
dc.typeArticle-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.mtphys.2019.100096-
dc.identifier.scopuseid_2-s2.0-85068218454-
dc.identifier.hkuros310526-
dc.identifier.volume9-
dc.identifier.spagearticle no. 100096-
dc.identifier.epagearticle no. 100096-
dc.publisher.placeUnited Kingdom-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats