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Article: Manipulation of band degeneracy and lattice strain for extraordinary PbTe thermoelectrics

TitleManipulation of band degeneracy and lattice strain for extraordinary PbTe thermoelectrics
Authors
Issue Date2020
PublisherAmerican Association for the Advancement of Science. The Journal's web site is located at https://spj.sciencemag.org/research/
Citation
Research, 2020, v. 2020, p. article no. 8151059 How to Cite?
AbstractMaximizing band degeneracy and minimizing phonon relaxation time are proven to be successful for advancing thermoelectrics. Alloying with monotellurides has been known to be an effective approach for converging the valence bands of PbTe for electronic improvements, while the lattice thermal conductivity of the materials remains available room for being further reduced. It is recently revealed that the broadening of phonon dispersion measures the strength of phonon scattering, and lattice dislocations are particularly effective sources for such broadening through lattice strain fluctuations. In this work, a fine control of MnTe and EuTe alloying enables a significant increase in density of electron states near the valence band edge of PbTe due to involvement of multiple transporting bands, while the creation of dense in-grain dislocations leads to an effective broadening in phonon dispersion for reduced phonon lifetime due to the large strain fluctuations of dislocations as confirmed by synchrotron X-ray diffraction. The synergy of both electronic and thermal improvements successfully leads the average thermoelectric figure of merit to be higher than that ever reported for p-type PbTe at working temperatures.
Persistent Identifierhttp://hdl.handle.net/10722/283384
ISSN

 

DC FieldValueLanguage
dc.contributor.authorWu, Y-
dc.contributor.authorNan, P-
dc.contributor.authorChen, Z-
dc.contributor.authorZENG, Z-
dc.contributor.authorLin, S-
dc.contributor.authorZhang, X-
dc.contributor.authorDong, H-
dc.contributor.authorChen, Z-
dc.contributor.authorGu, H-
dc.contributor.authorLi, W-
dc.contributor.authorChen, Y-
dc.contributor.authorGe, B-
dc.contributor.authorPei, Y-
dc.date.accessioned2020-06-22T02:55:46Z-
dc.date.available2020-06-22T02:55:46Z-
dc.date.issued2020-
dc.identifier.citationResearch, 2020, v. 2020, p. article no. 8151059-
dc.identifier.issn2096-5168-
dc.identifier.urihttp://hdl.handle.net/10722/283384-
dc.description.abstractMaximizing band degeneracy and minimizing phonon relaxation time are proven to be successful for advancing thermoelectrics. Alloying with monotellurides has been known to be an effective approach for converging the valence bands of PbTe for electronic improvements, while the lattice thermal conductivity of the materials remains available room for being further reduced. It is recently revealed that the broadening of phonon dispersion measures the strength of phonon scattering, and lattice dislocations are particularly effective sources for such broadening through lattice strain fluctuations. In this work, a fine control of MnTe and EuTe alloying enables a significant increase in density of electron states near the valence band edge of PbTe due to involvement of multiple transporting bands, while the creation of dense in-grain dislocations leads to an effective broadening in phonon dispersion for reduced phonon lifetime due to the large strain fluctuations of dislocations as confirmed by synchrotron X-ray diffraction. The synergy of both electronic and thermal improvements successfully leads the average thermoelectric figure of merit to be higher than that ever reported for p-type PbTe at working temperatures.-
dc.languageeng-
dc.publisherAmerican Association for the Advancement of Science. The Journal's web site is located at https://spj.sciencemag.org/research/-
dc.relation.ispartofResearch-
dc.rightsResearch. Copyright © American Association for the Advancement of Science.-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleManipulation of band degeneracy and lattice strain for extraordinary PbTe thermoelectrics-
dc.typeArticle-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.34133/2020/8151059-
dc.identifier.scopuseid_2-s2.0-85078786325-
dc.identifier.hkuros310522-
dc.identifier.volume2020-
dc.identifier.spagearticle no. 8151059-
dc.identifier.epagearticle no. 8151059-
dc.publisher.placeUnited States-

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