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Article: Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin

TitleTailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin
Authors
KeywordsDegrees of freedom (mechanics)
Electric fields
Landforms
Monolayers
Van der Waals forces
Issue Date2019
PublisherAmerican Association for the Advancement of Science: Science Advances. The Journal's web site is located at http://www.scienceadvances.org/
Citation
Science Advances, 2019, v. 5 n. 12, p. article no. eaax7407 How to Cite?
AbstractExcitons in monolayer semiconductors have a large optical transition dipole for strong coupling with light. Interlayer excitons in heterobilayers feature a large electric dipole that enables strong coupling with an electric field and exciton-exciton interaction at the cost of a small optical dipole. We demonstrate the ability to create a new class of excitons in hetero- and homobilayers that combines advantages of monolayer and interlayer excitons, i.e., featuring both large optical and electric dipoles. These excitons consist of an electron confined in an individual layer, and a hole extended in both layers, where the carrier-species–dependent layer hybridization can be controlled through rotational, translational, band offset, and valley-spin degrees of freedom. We observe different species of layer-hybridized valley excitons, which can be used for realizing strongly interacting polaritonic gases and optical quantum controls of bidirectional interlayer carrier transfer.
Persistent Identifierhttp://hdl.handle.net/10722/280374
ISSN
2019 Impact Factor: 13.116

 

DC FieldValueLanguage
dc.contributor.authorHsu, WT-
dc.contributor.authorLin, BH-
dc.contributor.authorLu, LS-
dc.contributor.authorLee, MH-
dc.contributor.authorChu, MW-
dc.contributor.authorLi, LJ-
dc.contributor.authorYao, W-
dc.contributor.authorChang, WH-
dc.contributor.authorShih, CK-
dc.date.accessioned2020-02-07T07:40:09Z-
dc.date.available2020-02-07T07:40:09Z-
dc.date.issued2019-
dc.identifier.citationScience Advances, 2019, v. 5 n. 12, p. article no. eaax7407-
dc.identifier.issn2375-2548-
dc.identifier.urihttp://hdl.handle.net/10722/280374-
dc.description.abstractExcitons in monolayer semiconductors have a large optical transition dipole for strong coupling with light. Interlayer excitons in heterobilayers feature a large electric dipole that enables strong coupling with an electric field and exciton-exciton interaction at the cost of a small optical dipole. We demonstrate the ability to create a new class of excitons in hetero- and homobilayers that combines advantages of monolayer and interlayer excitons, i.e., featuring both large optical and electric dipoles. These excitons consist of an electron confined in an individual layer, and a hole extended in both layers, where the carrier-species–dependent layer hybridization can be controlled through rotational, translational, band offset, and valley-spin degrees of freedom. We observe different species of layer-hybridized valley excitons, which can be used for realizing strongly interacting polaritonic gases and optical quantum controls of bidirectional interlayer carrier transfer.-
dc.languageeng-
dc.publisherAmerican Association for the Advancement of Science: Science Advances. The Journal's web site is located at http://www.scienceadvances.org/-
dc.relation.ispartofScience Advances-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectDegrees of freedom (mechanics)-
dc.subjectElectric fields-
dc.subjectLandforms-
dc.subjectMonolayers-
dc.subjectVan der Waals forces-
dc.titleTailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin-
dc.typeArticle-
dc.identifier.emailYao, W: wangyao@hku.hk-
dc.identifier.authorityYao, W=rp00827-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1126/sciadv.aax7407-
dc.identifier.scopuseid_2-s2.0-85076713317-
dc.identifier.hkuros309011-
dc.identifier.volume5-
dc.identifier.issue12-
dc.identifier.spagearticle no. eaax7407-
dc.identifier.epagearticle no. eaax7407-
dc.publisher.placeUnited States-

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