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Article: A SCANNING TUNNELING MICROSCOPY STUDY OF MONOLAYER AND BILAYER TRANSITION-METAL DICHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY

TitleA SCANNING TUNNELING MICROSCOPY STUDY OF MONOLAYER AND BILAYER TRANSITION-METAL DICHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY
Authors
Xie, MChen, J
KeywordsMolecular beam epitaxy
Molecular beams
Monolayers
Point defects
Quantum theory
Issue Date2018
PublisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml
Citation
Surface Review and Letters, 2018, v. 25 n. suppl. 1, p. article no. 1841002 How to Cite?
DOI: http://dx.doi.org/10.1142/S0218625X18410020
AbstractThis review presents an account of some recent scanning tunneling microscopy and spectroscopy (STM/S) studies of monolayer and bilayer transition-metal dichalcogenide (TMD) films grown by molecular-beam epitaxy (MBE). In addition to some intrinsic properties revealed by STM/S, defects such as inversion domain boundaries and point defects, their properties and induced effects, are presented. More specifically, the quantum confinement and moiré potential effects, charge state transition, quasi-particle interference and structural phase transition as revealed by STM/S are described.
Persistent Identifierhttp://hdl.handle.net/10722/280005
ISSN
0218-625X
2021 Impact Factor: 1.240
2020 SCImago Journal Rankings: 0.261
ISI Accession Number ID
WOS:000458552500009

 

DC FieldValueLanguage
dc.contributor.authorXie, M-
dc.contributor.authorChen, J-
dc.date.accessioned2019-12-23T08:24:52Z-
dc.date.available2019-12-23T08:24:52Z-
dc.date.issued2018-
dc.identifier.citationSurface Review and Letters, 2018, v. 25 n. suppl. 1, p. article no. 1841002-
dc.identifier.issn0218-625X-
dc.identifier.urihttp://hdl.handle.net/10722/280005-
dc.description.abstractThis review presents an account of some recent scanning tunneling microscopy and spectroscopy (STM/S) studies of monolayer and bilayer transition-metal dichalcogenide (TMD) films grown by molecular-beam epitaxy (MBE). In addition to some intrinsic properties revealed by STM/S, defects such as inversion domain boundaries and point defects, their properties and induced effects, are presented. More specifically, the quantum confinement and moiré potential effects, charge state transition, quasi-particle interference and structural phase transition as revealed by STM/S are described.-
dc.languageeng-
dc.publisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml-
dc.relation.ispartofSurface Review and Letters-
dc.rightsElectronic version of an article published as Surface Review and Letters, 2018, v. 25 n. suppl. 1, p. article no. 1841002. [Article DOI: 10.1142/S0218625X18410020] © World Scientific Publishing Company [http://www.worldscinet.com/srl/srl.shtml]-
dc.subjectMolecular beam epitaxy-
dc.subjectMolecular beams-
dc.subjectMonolayers-
dc.subjectPoint defects-
dc.subjectQuantum theory-
dc.titleA SCANNING TUNNELING MICROSCOPY STUDY OF MONOLAYER AND BILAYER TRANSITION-METAL DICHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY-
dc.typeArticle-
dc.identifier.emailXie, M: physhead@hku.hk-
dc.identifier.authorityXie, M=rp00818-
dc.description.naturepostprint-
dc.identifier.doi10.1142/S0218625X18410020-
dc.identifier.scopuseid_2-s2.0-85059192849-
dc.identifier.hkuros308763-
dc.identifier.volume25-
dc.identifier.issuesuppl. 1-
dc.identifier.spagearticle no. 1841002-
dc.identifier.epagearticle no. 1841002-
dc.identifier.isiWOS:000458552500009-
dc.publisher.placeSingapore-
dc.identifier.issnl0218-625X-

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