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Article: Field‐Effect Transistors Based on 2D Organic Semiconductors Developed by a Hybrid Deposition Method
Title | Field‐Effect Transistors Based on 2D Organic Semiconductors Developed by a Hybrid Deposition Method |
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Authors | |
Keywords | 2D field‐effect transistors monolayers organic crystals templates |
Issue Date | 2019 |
Publisher | Wiley Open Access. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2198-3844 |
Citation | Advanced Science, 2019, v. 6 n. 19, p. article no. 1900775 How to Cite? |
Abstract | Solution‐processed 2D organic semiconductors (OSCs) have drawn considerable attention because of their novel applications from flexible optoelectronics to biosensors. However, obtaining well‐oriented sheets of 2D organic materials with low defect density still poses a challenge. Here, a highly crystallized 2,9‐didecyldinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (C10‐DNTT) monolayer crystal with large‐area uniformity is obtained by an ultraslow shearing (USS) method and its growth pattern shows a kinetic Wulff's construction supported by theoretical calculations of surface energies. The resulting seamless and highly crystalline monolayers are then used as templates for thermally depositing another C10‐DNTT ultrathin top‐up film. The organic thin films deposited by this hybrid approach show an interesting coherence structure with a copied molecular orientation of the templating crystal. The organic field‐effect transistors developed by these hybrid C10‐DNTT films exhibit improved carrier mobility of 14.7 cm2 V−1 s−1 as compared with 7.3 cm2 V−1 s−1 achieved by pure thermal evaporation (100% improvement) and 2.8 cm2 V−1 s−1 achieved by solution sheared monolayer C10‐DNTT. This work establishes a simple yet effective approach for fabricating high‐performance and low‐cost electronics on a large scale. |
Persistent Identifier | http://hdl.handle.net/10722/279457 |
ISSN | 2023 Impact Factor: 14.3 2023 SCImago Journal Rankings: 3.914 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | ZHOU, Z | - |
dc.contributor.author | Wu, Q | - |
dc.contributor.author | WANG, S | - |
dc.contributor.author | Huang, YT | - |
dc.contributor.author | Guo, H | - |
dc.contributor.author | Feng, SP | - |
dc.contributor.author | Chan, PKL | - |
dc.date.accessioned | 2019-11-01T07:17:43Z | - |
dc.date.available | 2019-11-01T07:17:43Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Advanced Science, 2019, v. 6 n. 19, p. article no. 1900775 | - |
dc.identifier.issn | 2198-3844 | - |
dc.identifier.uri | http://hdl.handle.net/10722/279457 | - |
dc.description.abstract | Solution‐processed 2D organic semiconductors (OSCs) have drawn considerable attention because of their novel applications from flexible optoelectronics to biosensors. However, obtaining well‐oriented sheets of 2D organic materials with low defect density still poses a challenge. Here, a highly crystallized 2,9‐didecyldinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (C10‐DNTT) monolayer crystal with large‐area uniformity is obtained by an ultraslow shearing (USS) method and its growth pattern shows a kinetic Wulff's construction supported by theoretical calculations of surface energies. The resulting seamless and highly crystalline monolayers are then used as templates for thermally depositing another C10‐DNTT ultrathin top‐up film. The organic thin films deposited by this hybrid approach show an interesting coherence structure with a copied molecular orientation of the templating crystal. The organic field‐effect transistors developed by these hybrid C10‐DNTT films exhibit improved carrier mobility of 14.7 cm2 V−1 s−1 as compared with 7.3 cm2 V−1 s−1 achieved by pure thermal evaporation (100% improvement) and 2.8 cm2 V−1 s−1 achieved by solution sheared monolayer C10‐DNTT. This work establishes a simple yet effective approach for fabricating high‐performance and low‐cost electronics on a large scale. | - |
dc.language | eng | - |
dc.publisher | Wiley Open Access. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2198-3844 | - |
dc.relation.ispartof | Advanced Science | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.subject | 2D | - |
dc.subject | field‐effect transistors | - |
dc.subject | monolayers | - |
dc.subject | organic crystals | - |
dc.subject | templates | - |
dc.title | Field‐Effect Transistors Based on 2D Organic Semiconductors Developed by a Hybrid Deposition Method | - |
dc.type | Article | - |
dc.identifier.email | Huang, YT: ythuang@connect.hku.hk | - |
dc.identifier.email | Feng, SP: hpfeng@hku.hk | - |
dc.identifier.email | Chan, PKL: pklc@hku.hk | - |
dc.identifier.authority | Feng, SP=rp01533 | - |
dc.identifier.authority | Chan, PKL=rp01532 | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1002/advs.201900775 | - |
dc.identifier.scopus | eid_2-s2.0-85070099704 | - |
dc.identifier.hkuros | 308571 | - |
dc.identifier.volume | 6 | - |
dc.identifier.issue | 19 | - |
dc.identifier.spage | article no. 1900775 | - |
dc.identifier.epage | article no. 1900775 | - |
dc.identifier.isi | WOS:000478040300001 | - |
dc.publisher.place | Germany | - |
dc.identifier.issnl | 2198-3844 | - |