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Article: Edge-Epitaxial Growth of Graphene on Cu with a Hydrogen-Free Approach

TitleEdge-Epitaxial Growth of Graphene on Cu with a Hydrogen-Free Approach
Authors
KeywordsAtmospheric pressure
Chemical vapor deposition
Crystal orientation
Density functional theory
Graphene
Issue Date2019
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/cm
Citation
Chemistry of Materials, 2019, v. 31 n. 7, p. 2555-2562 How to Cite?
AbstractWe demonstrate a new concept of edge-epitaxial growth that enables the van der Waals (vdWs) epitaxial graphene growth on different Cu facets. This approach simply entails turning off hydrogen during the nucleation stage of the atmospheric pressure chemical vapor deposition process. Fundamentally, different from conventional vdWs growth, this new type of epitaxial growth benefits from the strong binding between the graphene edge and a metal step in a hydrogen-absent atmosphere. This interaction fixes the orientation of graphene grains in energetically preferable configurations at the early nucleation stage. Specifically, single-crystal graphene grains grown on Cu(111) have irregular shapes with rough edges and are misaligned slightly with respect to the Cu(111) lattice. Graphene grains form with two possible orientations that are rotated by ∼30° on the Cu(100) surface, and grains with three preferred orientations are observed on Cu(110). Density functional theory calculations further prove the enhanced edge-metal step interaction and thus validate the experimental observations of these specific graphene crystal orientations on Cu(100) and Cu(110). Observation of this new type of edge-epitaxial growth helps to clarify many contradictory graphene growth phenomena that have been observed previously and may provide insights that will facilitate an understanding of the growth of other materials using the chemical vapor deposition method.
Persistent Identifierhttp://hdl.handle.net/10722/278199
ISSN
2019 Impact Factor: 9.567
2015 SCImago Journal Rankings: 4.232

 

DC FieldValueLanguage
dc.contributor.authorWu, R-
dc.contributor.authorDing, Y-
dc.contributor.authorYu, KM-
dc.contributor.authorZhou, K-
dc.contributor.authorZHU, Z-
dc.contributor.authorOu, X-
dc.contributor.authorZhang, Q-
dc.contributor.authorZhuang, M-
dc.contributor.authorLi, W-
dc.contributor.authorXu, Z-
dc.contributor.authorAltman, MS-
dc.contributor.authorLuo, Z-
dc.date.accessioned2019-10-04T08:09:24Z-
dc.date.available2019-10-04T08:09:24Z-
dc.date.issued2019-
dc.identifier.citationChemistry of Materials, 2019, v. 31 n. 7, p. 2555-2562-
dc.identifier.issn0897-4756-
dc.identifier.urihttp://hdl.handle.net/10722/278199-
dc.description.abstractWe demonstrate a new concept of edge-epitaxial growth that enables the van der Waals (vdWs) epitaxial graphene growth on different Cu facets. This approach simply entails turning off hydrogen during the nucleation stage of the atmospheric pressure chemical vapor deposition process. Fundamentally, different from conventional vdWs growth, this new type of epitaxial growth benefits from the strong binding between the graphene edge and a metal step in a hydrogen-absent atmosphere. This interaction fixes the orientation of graphene grains in energetically preferable configurations at the early nucleation stage. Specifically, single-crystal graphene grains grown on Cu(111) have irregular shapes with rough edges and are misaligned slightly with respect to the Cu(111) lattice. Graphene grains form with two possible orientations that are rotated by ∼30° on the Cu(100) surface, and grains with three preferred orientations are observed on Cu(110). Density functional theory calculations further prove the enhanced edge-metal step interaction and thus validate the experimental observations of these specific graphene crystal orientations on Cu(100) and Cu(110). Observation of this new type of edge-epitaxial growth helps to clarify many contradictory graphene growth phenomena that have been observed previously and may provide insights that will facilitate an understanding of the growth of other materials using the chemical vapor deposition method.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/cm-
dc.relation.ispartofChemistry of Materials-
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].-
dc.subjectAtmospheric pressure-
dc.subjectChemical vapor deposition-
dc.subjectCrystal orientation-
dc.subjectDensity functional theory-
dc.subjectGraphene-
dc.titleEdge-Epitaxial Growth of Graphene on Cu with a Hydrogen-Free Approach-
dc.typeArticle-
dc.identifier.emailLi, W: liwd@hku.hk-
dc.identifier.authorityLi, W=rp01581-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acs.chemmater.9b00147-
dc.identifier.scopuseid_2-s2.0-85063385588-
dc.identifier.hkuros306130-
dc.identifier.volume31-
dc.identifier.issue7-
dc.identifier.spage2555-
dc.identifier.epage2562-
dc.publisher.placeUnited States-

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