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Conference Paper: Doping Effects on the Electronic Structures and Transport Properties of GeS-Type IV-VI Crystals

TitleDoping Effects on the Electronic Structures and Transport Properties of GeS-Type IV-VI Crystals
Authors
Chen, Y
Issue Date2019
Citation
The Minerals, Metals and Materials Society (TMS) 148th Annual Meeting & Exhibition, San Antonio, TX, USA, 10-14 March 2019 How to Cite?
DescriptionElectronic Materials: Alloys and Compounds for Thermoelectric and Solar Cell Applications VII — Session II
Persistent Identifierhttp://hdl.handle.net/10722/272414

 

DC FieldValueLanguage
dc.contributor.authorChen, Y-
dc.date.accessioned2019-07-20T10:41:52Z-
dc.date.available2019-07-20T10:41:52Z-
dc.date.issued2019-
dc.identifier.citationThe Minerals, Metals and Materials Society (TMS) 148th Annual Meeting & Exhibition, San Antonio, TX, USA, 10-14 March 2019-
dc.identifier.urihttp://hdl.handle.net/10722/272414-
dc.descriptionElectronic Materials: Alloys and Compounds for Thermoelectric and Solar Cell Applications VII — Session II-
dc.languageeng-
dc.relation.ispartofMinerals, Metals & Materials Society (TMS) Annual Meeting & Exhibition-
dc.titleDoping Effects on the Electronic Structures and Transport Properties of GeS-Type IV-VI Crystals-
dc.typeConference_Paper-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.identifier.hkuros299000-

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