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Article: Synthesis and transport properties of Si-doped In2 O 3 (ZnO)3 superlattice nanobelts
| Title | Synthesis and transport properties of Si-doped In<inf>2</inf>O <inf>3</inf>(ZnO)<inf>3</inf> superlattice nanobelts |
|---|---|
| Authors | |
| Issue Date | 2011 |
| Citation | CrystEngComm, 2011, v. 13, n. 10, p. 3569-3572 How to Cite? |
| Abstract | Si-doped In2O3(ZnO)3 superlattice nanobelts were synthesized via chemical vapor deposition. The transmission electron microscopy result indicates that the nanobelts have a superlattice structure. The introduced Si in In2O3(ZnO)3 nanobelts could exist as SiZn as donor dopants, leading to a low resistivity of 6.25 × 10-3 Ω cm. The transport properties of the nanobelts were measured. A nonlinear I-V characteristic is found in a voltage span of 0.4-1.5 V, which is likely attributed to the superlattice structure with statistical potential distribution around the conduction band edge. © 2011 The Royal Society of Chemistry. |
| Persistent Identifier | http://hdl.handle.net/10722/265595 |
| ISSN | 2023 Impact Factor: 2.6 2023 SCImago Journal Rankings: 0.535 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Zhang, J. Y. | - |
| dc.contributor.author | Lang, Y. | - |
| dc.contributor.author | Chu, Z. Q. | - |
| dc.contributor.author | Liu, X. | - |
| dc.contributor.author | Wu, L. L. | - |
| dc.contributor.author | Zhang, X. T. | - |
| dc.date.accessioned | 2018-12-03T01:21:07Z | - |
| dc.date.available | 2018-12-03T01:21:07Z | - |
| dc.date.issued | 2011 | - |
| dc.identifier.citation | CrystEngComm, 2011, v. 13, n. 10, p. 3569-3572 | - |
| dc.identifier.issn | 1466-8033 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/265595 | - |
| dc.description.abstract | Si-doped In2O3(ZnO)3 superlattice nanobelts were synthesized via chemical vapor deposition. The transmission electron microscopy result indicates that the nanobelts have a superlattice structure. The introduced Si in In2O3(ZnO)3 nanobelts could exist as SiZn as donor dopants, leading to a low resistivity of 6.25 × 10-3 Ω cm. The transport properties of the nanobelts were measured. A nonlinear I-V characteristic is found in a voltage span of 0.4-1.5 V, which is likely attributed to the superlattice structure with statistical potential distribution around the conduction band edge. © 2011 The Royal Society of Chemistry. | - |
| dc.language | eng | - |
| dc.relation.ispartof | CrystEngComm | - |
| dc.title | Synthesis and transport properties of Si-doped In<inf>2</inf>O <inf>3</inf>(ZnO)<inf>3</inf> superlattice nanobelts | - |
| dc.type | Article | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1039/c1ce00004g | - |
| dc.identifier.scopus | eid_2-s2.0-79955157625 | - |
| dc.identifier.volume | 13 | - |
| dc.identifier.issue | 10 | - |
| dc.identifier.spage | 3569 | - |
| dc.identifier.epage | 3572 | - |
| dc.identifier.eissn | 1466-8033 | - |
| dc.identifier.isi | WOS:000289902600046 | - |
| dc.identifier.issnl | 1466-8033 | - |