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Article: High-yield synthesis of In2-xGaxO3(ZnO) 3 nanobelts with a planar superlattice structure

TitleHigh-yield synthesis of In<inf>2-x</inf>Ga<inf>x</inf>O<inf>3</inf>(ZnO) <inf>3</inf> nanobelts with a planar superlattice structure
Authors
Issue Date2010
Citation
CrystEngComm, 2010, v. 12, n. 7, p. 2047-2050 How to Cite?
AbstractHomologous compound In2-xGaxO3(ZnO) 3 (x ≈ 0.18) nanobelts were successfully synthesized in high yield by a simple thermal vapour method for the first time. Two sets of peaks appear in X-ray diffraction pattern. One is attributed to wurtzite ZnO, while the other is indexed to rhombohedral In2-xGaxO3(ZnO) 3 (x ≈ 0.18) with lattice constants a = 0.335 nm and c = 4.24 ± 0.01 nm within experimental errors. Cross-section high-resolution transmission electron microscopy observations and XRD data confirmed the formation of a planar superlattice structure in the nanobelts, which consists of alternate stacking of In-O layers and In1-xGax/Zn-O blocks along the [0001] direction, which is normal to the growth direction, leading to the (0001) plane as a surface. © 2010 The Royal Society of Chemistry.
Persistent Identifierhttp://hdl.handle.net/10722/265581
ISSN
2023 Impact Factor: 2.6
2023 SCImago Journal Rankings: 0.535
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWu, L. L.-
dc.contributor.authorLiu, F. W.-
dc.contributor.authorChu, Z. Q.-
dc.contributor.authorLiang, Y.-
dc.contributor.authorXu, H. Y.-
dc.contributor.authorLu, H. Q.-
dc.contributor.authorZhang, X. T.-
dc.contributor.authorLi, Quan-
dc.contributor.authorHark, S. K.-
dc.date.accessioned2018-12-03T01:21:05Z-
dc.date.available2018-12-03T01:21:05Z-
dc.date.issued2010-
dc.identifier.citationCrystEngComm, 2010, v. 12, n. 7, p. 2047-2050-
dc.identifier.issn1466-8033-
dc.identifier.urihttp://hdl.handle.net/10722/265581-
dc.description.abstractHomologous compound In2-xGaxO3(ZnO) 3 (x ≈ 0.18) nanobelts were successfully synthesized in high yield by a simple thermal vapour method for the first time. Two sets of peaks appear in X-ray diffraction pattern. One is attributed to wurtzite ZnO, while the other is indexed to rhombohedral In2-xGaxO3(ZnO) 3 (x ≈ 0.18) with lattice constants a = 0.335 nm and c = 4.24 ± 0.01 nm within experimental errors. Cross-section high-resolution transmission electron microscopy observations and XRD data confirmed the formation of a planar superlattice structure in the nanobelts, which consists of alternate stacking of In-O layers and In1-xGax/Zn-O blocks along the [0001] direction, which is normal to the growth direction, leading to the (0001) plane as a surface. © 2010 The Royal Society of Chemistry.-
dc.languageeng-
dc.relation.ispartofCrystEngComm-
dc.titleHigh-yield synthesis of In<inf>2-x</inf>Ga<inf>x</inf>O<inf>3</inf>(ZnO) <inf>3</inf> nanobelts with a planar superlattice structure-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1039/b927451k-
dc.identifier.scopuseid_2-s2.0-77954519867-
dc.identifier.volume12-
dc.identifier.issue7-
dc.identifier.spage2047-
dc.identifier.epage2050-
dc.identifier.eissn1466-8033-
dc.identifier.isiWOS:000279627700017-
dc.identifier.issnl1466-8033-

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